Realization of an n-channel GaAs/AlGaAs bistable field-effect transistor (BISFET)

The first realization of a novel heterostructure device, the bistable field-effect transistor (BISFET), is reported. The device uses an n-channel GaAs/AlGaAs inversion channel (IC) structure. It contains a positive feedback loop between the gate and source terminals, which is activated above a gate...

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Veröffentlicht in:	IEEE electron device letters 1993, Vol.14 (8), p.385-387
Hauptverfasser:	OJHA, J. J, SIMMONS, J. G, MAND, R. S, SPRINGTHORPE, A. J
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Exact sciences and technology Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors
Online-Zugang:	Volltext
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