Real-time monitoring and control during MOVPE growth of CdTe using multiwavelength ellipsometry
New multi-wavelength in-situ ellipsometer hardware and data analysis software are described. The hardware can simultaneously acquire accurate ellipsometric data at 12 wavelengths in less than 1 s, is simple and compact and is well suited for in-situ monitoring. The data analysis software implements...
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| Veröffentlicht in: | Thin solid films 1993-01, Vol.233 (1), p.293-296 |
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| container_title | Thin solid films |
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| creator | Johs, Blaine Doerr, Dave Pittal, Shakil Bhat, I.B. Dakshinamurthy, S. |
| description | New multi-wavelength
in-situ ellipsometer hardware and data analysis software are described. The hardware can simultaneously acquire accurate ellipsometric data at 12 wavelengths in less than 1 s, is simple and compact and is well suited for
in-situ monitoring. The data analysis software implements a “virtual interface” approach to determine in real time the characteristics (growth rate and composition) of the near-surface region of the film. These new tools were used to study the metal-organic vapor phase epitaxy (MOVPE) growth of CdTe on GaAs. From a post-deposition analysis of the
in-situ data, dielectric constants of CdTe at growth temperature were obtained. Non-uniformity in the CdTe film thickness, and film nucleation during the initial stages of growth, were also observed in the post-deposition analysis. The determined CdTe dielectric constants were utilized in subsequent depositions to determine the growth rate of a CdTe film in real time. Feedback control of the CdTe growth rate was effected by connecting an analog control voltage line from the data acquisition/analysis computer to the Cd mass flow controller. |
| doi_str_mv | 10.1016/0040-6090(93)90111-2 |
| format | Article |
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in-situ data, dielectric constants of CdTe at growth temperature were obtained. Non-uniformity in the CdTe film thickness, and film nucleation during the initial stages of growth, were also observed in the post-deposition analysis. The determined CdTe dielectric constants were utilized in subsequent depositions to determine the growth rate of a CdTe film in real time. Feedback control of the CdTe growth rate was effected by connecting an analog control voltage line from the data acquisition/analysis computer to the Cd mass flow controller.</description><identifier>ISSN: 0040-6090</identifier><identifier>EISSN: 1879-2731</identifier><identifier>DOI: 10.1016/0040-6090(93)90111-2</identifier><identifier>CODEN: THSFAP</identifier><language>eng</language><publisher>Lausanne: Elsevier B.V</publisher><subject>Condensed matter: structure, mechanical and thermal properties ; Exact sciences and technology ; Physics ; Solid surfaces and solid-solid interfaces ; Surface and interface dynamics and vibrations ; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) ; Thin film structure and morphology</subject><ispartof>Thin solid films, 1993-01, Vol.233 (1), p.293-296</ispartof><rights>1993</rights><rights>1993 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c465t-6adb322f968d59764977b1c0f065e7f2b7584e419485e750b752311c41ea060d3</citedby><cites>FETCH-LOGICAL-c465t-6adb322f968d59764977b1c0f065e7f2b7584e419485e750b752311c41ea060d3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/0040609093901112$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>309,310,314,776,780,785,786,3536,23910,23911,25119,27903,27904,65309</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=4907418$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Johs, Blaine</creatorcontrib><creatorcontrib>Doerr, Dave</creatorcontrib><creatorcontrib>Pittal, Shakil</creatorcontrib><creatorcontrib>Bhat, I.B.</creatorcontrib><creatorcontrib>Dakshinamurthy, S.</creatorcontrib><title>Real-time monitoring and control during MOVPE growth of CdTe using multiwavelength ellipsometry</title><title>Thin solid films</title><description>New multi-wavelength
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in-situ ellipsometer hardware and data analysis software are described. The hardware can simultaneously acquire accurate ellipsometric data at 12 wavelengths in less than 1 s, is simple and compact and is well suited for
in-situ monitoring. The data analysis software implements a “virtual interface” approach to determine in real time the characteristics (growth rate and composition) of the near-surface region of the film. These new tools were used to study the metal-organic vapor phase epitaxy (MOVPE) growth of CdTe on GaAs. From a post-deposition analysis of the
in-situ data, dielectric constants of CdTe at growth temperature were obtained. Non-uniformity in the CdTe film thickness, and film nucleation during the initial stages of growth, were also observed in the post-deposition analysis. The determined CdTe dielectric constants were utilized in subsequent depositions to determine the growth rate of a CdTe film in real time. Feedback control of the CdTe growth rate was effected by connecting an analog control voltage line from the data acquisition/analysis computer to the Cd mass flow controller.</abstract><cop>Lausanne</cop><pub>Elsevier B.V</pub><doi>10.1016/0040-6090(93)90111-2</doi><tpages>4</tpages></addata></record> |
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| source | Elsevier ScienceDirect Journals |
| subjects | Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Physics Solid surfaces and solid-solid interfaces Surface and interface dynamics and vibrations Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology |
| title | Real-time monitoring and control during MOVPE growth of CdTe using multiwavelength ellipsometry |
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