Solid-Ionic Memory in a van der Waals Heterostructure
Defect states dominate the performance of low-dimensional nanoelectronics, which deteriorate the serviceability of devices in most cases. But in recent years, some intriguing functionalities are discovered by defect engineering. In this work, we demonstrate a bifunctional memory device of a MoS2/BiF...
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| Veröffentlicht in: | ACS nano 2022-01, Vol.16 (1), p.221-231 |
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| creator | Chen, Jieqiong Guo, Rui Wang, Xiaowei Zhu, Chao Cao, Guiming You, Lu Duan, Ruihuan Zhu, Chao Hadke, Shreyash Sudhakar Cao, Xun Salim, Teddy Buenconsejo, Pio John S Xu, Manzhang Zhao, Xiaoxu Zhou, Jiadong Deng, Ya Zeng, Qingsheng Wong, Lydia H Chen, Jingsheng Liu, Fucai Liu, Zheng |
| description | Defect states dominate the performance of low-dimensional nanoelectronics, which deteriorate the serviceability of devices in most cases. But in recent years, some intriguing functionalities are discovered by defect engineering. In this work, we demonstrate a bifunctional memory device of a MoS2/BiFeO3/SrTiO3 van der Waals heterostructure, which can be programmed and erased by solely one kind of external stimuli (light or electrical-gate pulse) via engineering of oxygen-vacancy-based solid-ionic gating. The device shows multibit electrical memory capability (>22 bits) with a large linearly tunable dynamic range of 7.1 × 106 (137 dB). Furthermore, the device can be programmed by green- and red-light illuminations and then erased by UV light pulses. Besides, the photoresponse under red-light illumination reaches a high photoresponsivity (6.7 × 104 A/W) and photodetectivity (2.12 × 1013 Jones). These results highlighted solid-ionic memory for building up multifunctional electronic and optoelectronic devices. |
| doi_str_mv | 10.1021/acsnano.1c05841 |
| format | Article |
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But in recent years, some intriguing functionalities are discovered by defect engineering. In this work, we demonstrate a bifunctional memory device of a MoS2/BiFeO3/SrTiO3 van der Waals heterostructure, which can be programmed and erased by solely one kind of external stimuli (light or electrical-gate pulse) via engineering of oxygen-vacancy-based solid-ionic gating. The device shows multibit electrical memory capability (>22 bits) with a large linearly tunable dynamic range of 7.1 × 106 (137 dB). Furthermore, the device can be programmed by green- and red-light illuminations and then erased by UV light pulses. Besides, the photoresponse under red-light illumination reaches a high photoresponsivity (6.7 × 104 A/W) and photodetectivity (2.12 × 1013 Jones). These results highlighted solid-ionic memory for building up multifunctional electronic and optoelectronic devices.</description><identifier>ISSN: 1936-0851</identifier><identifier>EISSN: 1936-086X</identifier><identifier>DOI: 10.1021/acsnano.1c05841</identifier><identifier>PMID: 35001610</identifier><language>eng</language><publisher>United States: American Chemical Society</publisher><ispartof>ACS nano, 2022-01, Vol.16 (1), p.221-231</ispartof><rights>2022 American Chemical Society</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-a374t-d268aeddb9ed8a19c55395a182d4ab19e186f3c2cec13218ba3b6f02defdbfac3</citedby><cites>FETCH-LOGICAL-a374t-d268aeddb9ed8a19c55395a182d4ab19e186f3c2cec13218ba3b6f02defdbfac3</cites><orcidid>0000-0003-3188-2803 ; 0000-0001-5268-2136 ; 0000-0003-3058-2884 ; 0000-0002-3733-8908 ; 0000-0002-6034-381X ; 0000-0003-0964-4841 ; 0000-0001-9059-1745 ; 0000-0003-1275-0573 ; 0000-0002-8825-7198 ; 0000-0001-9746-3770</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://pubs.acs.org/doi/pdf/10.1021/acsnano.1c05841$$EPDF$$P50$$Gacs$$H</linktopdf><linktohtml>$$Uhttps://pubs.acs.org/doi/10.1021/acsnano.1c05841$$EHTML$$P50$$Gacs$$H</linktohtml><link.rule.ids>314,776,780,2751,27055,27903,27904,56716,56766</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/35001610$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Chen, Jieqiong</creatorcontrib><creatorcontrib>Guo, Rui</creatorcontrib><creatorcontrib>Wang, Xiaowei</creatorcontrib><creatorcontrib>Zhu, Chao</creatorcontrib><creatorcontrib>Cao, Guiming</creatorcontrib><creatorcontrib>You, Lu</creatorcontrib><creatorcontrib>Duan, Ruihuan</creatorcontrib><creatorcontrib>Zhu, Chao</creatorcontrib><creatorcontrib>Hadke, Shreyash Sudhakar</creatorcontrib><creatorcontrib>Cao, Xun</creatorcontrib><creatorcontrib>Salim, Teddy</creatorcontrib><creatorcontrib>Buenconsejo, Pio John S</creatorcontrib><creatorcontrib>Xu, Manzhang</creatorcontrib><creatorcontrib>Zhao, Xiaoxu</creatorcontrib><creatorcontrib>Zhou, Jiadong</creatorcontrib><creatorcontrib>Deng, Ya</creatorcontrib><creatorcontrib>Zeng, Qingsheng</creatorcontrib><creatorcontrib>Wong, Lydia H</creatorcontrib><creatorcontrib>Chen, Jingsheng</creatorcontrib><creatorcontrib>Liu, Fucai</creatorcontrib><creatorcontrib>Liu, Zheng</creatorcontrib><title>Solid-Ionic Memory in a van der Waals Heterostructure</title><title>ACS nano</title><addtitle>ACS Nano</addtitle><description>Defect states dominate the performance of low-dimensional nanoelectronics, which deteriorate the serviceability of devices in most cases. 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| title | Solid-Ionic Memory in a van der Waals Heterostructure |
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