Pseudomorphic InGaAs/GaAs and GaAs/AlGaAs asymmetric triangular quantum wells grown by MBE for optoelectronic device applications

We present the growth and properties of asymmetric triangular wells (ATQWs) involving GaAs/Al sub(0.3)Ga sub(0.7)As and strained In sub(x)Ga sub(1-x)As by molecular beam epitaxy. Compositional grading was approximated using a superlattice technique and varying the thickness of the ternary material i...

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Veröffentlicht in:	Journal of crystal growth 1993-02, Vol.127 (1-4), p.606-610
Hauptverfasser:	DROOPAD, R, GERBER, D. S, CHOI, C, MARACAS, G. N
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Exact sciences and technology Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of specific thin films Physics
Online-Zugang:	Volltext
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