Generating ion implantation profiles in one and two dimensions. 1: density functions

In this, the first of two papers, the problem of constructing ion implantation profiles in one and two dimensions from depth-independent spatial moments is discussed. Comparisons are made between Pearson and Johnson curves, constructed from moments produced by a transport equation solver, and profil...

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Veröffentlicht in:	Journal of physics. D, Applied physics Applied physics, 1996-05, Vol.29 (5), p.1274-1285, Article 1274
Hauptverfasser:	Bowyer, M D J, Ashworth, D G, Oven, R
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Defects and impurities in crystals microstructure Doping and impurity implantation in germanium and silicon Exact sciences and technology Physics Structure of solids and liquids crystallography
Online-Zugang:	Volltext
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