Phase Change Ge-Rich Ge-Sb-Te/Sb2Te3 Core-Shell Nanowires by Metal Organic Chemical Vapor Deposition

Ge-rich Ge-Sb-Te compounds are attractive materials for future phase change memories due to their greater crystallization temperature as it provides a wide range of applications. Herein, we report the self-assembled Ge-rich Ge-Sb-Te/Sb2Te3 core-shell nanowires grown by metal-organic chemical vapor d...

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Veröffentlicht in:	Nanomaterials (Basel, Switzerland) Switzerland), 2021-12, Vol.11 (12), p.3358, Article 3358
Hauptverfasser:	Kumar, Arun, Cecchini, Raimondo, Wiemer, Claudia, Mussi, Valentina, De Simone, Sara, Calarco, Raffaella, Scuderi, Mario, Nicotra, Giuseppe, Longo, Massimo
Format:	Artikel
Sprache:	eng
Schlagworte:	Antimony Antimony telluride Chemical composition Chemical vapor deposition Chemistry Chemistry, Multidisciplinary core-shell Crystallization Electron energy loss spectroscopy Energy dissipation Energy loss Germanium Germanium compounds Ge–Sb–Te Gold Heterostructures High resolution electron microscopy Materials Science Materials Science, Multidisciplinary Metalorganic chemical vapor deposition MOCVD Morphology Nanoparticles Nanoscience & Nanotechnology Nanotechnology Nanowires Organic chemicals Organic chemistry Phase change Phase transitions phase-change memory Physical Sciences Physics Physics, Applied Room temperature Scanning electron microscopy Science & Technology Science & Technology - Other Topics Self-assembly Silicon dioxide Silicon substrates Spectroscopy Spectrum analysis Technology Tellurium Transmission electron microscopy Vapors VLS X-ray diffraction
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