Metal semiconductor field effect transistor based on single crystal GaN

Metal semiconductor field effect transistor based on single crystal GaN

In this letter we report the fabrication and characterization of a metal semiconductor field effect transistor (MESFET) based on single crystal GaN. The GaN layer was deposited over sapphire substrate using low pressure metalorganic chemical vapor deposition. MESFET devices were fabricated on isolat...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Applied physics letters 1993-04, Vol.62 (15), p.1786-1787
Hauptverfasser: ASIF KHAN, M, KUZNIA, J. N, BHATTARAI, A. R, OLSON, D. T
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 1787
container_issue 15
container_start_page 1786
container_title Applied physics letters
container_volume 62
creator ASIF KHAN, M
KUZNIA, J. N
BHATTARAI, A. R
OLSON, D. T
description In this letter we report the fabrication and characterization of a metal semiconductor field effect transistor (MESFET) based on single crystal GaN. The GaN layer was deposited over sapphire substrate using low pressure metalorganic chemical vapor deposition. MESFET devices were fabricated on isolated mesas using TiAu for the source and drain ohmic contacts and silver for the gate Schottky. For devices with a gate length of 4 μm (channel opening, i.e., source to drain separation of 10 μm), a transconductance of 23 mS/mm was obtained at −1 V gate bias. Complete pinch-off was observed for a gate potential of −12 V.
doi_str_mv 10.1063/1.109549
format Article
fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_26127274</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>26127274</sourcerecordid><originalsourceid>FETCH-LOGICAL-c353t-8ec515ff2629cf5a63e5d8e49fe6a83fbf54ec0f75fb797f216538d8e8e83b553</originalsourceid><addsrcrecordid>eNo9kE9LAzEQxYMoWKvgR9iDiJfV_Nkkm6MUrULVi55DNjsjK-luzWwP_fZuaZE5PGb4zYP3GLsW_F5wox7EJE5X7oTNBLe2VELUp2zGOVelcVqcswuin2nVUqkZW77BGFJBsO7i0LfbOA65wA5SWwAixLEYc-ipo_29CQRtMfQFdf13giLmHe2_l-H9kp1hSARXR52zr-enz8VLufpYvi4eV2VUWo1lDVELjSiNdBF1MAp0W0PlEEyoFTaoK4gcrcbGOotSGK3qiZhGNVqrObs9-G7y8LsFGv26owgphR6GLXlphLTSVhN4dwBjHogyoN_kbh3yzgvu90154Q9NTejN0TNQDAmnwLGjf76ylTNOqD_LxWeX</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>26127274</pqid></control><display><type>article</type><title>Metal semiconductor field effect transistor based on single crystal GaN</title><source>AIP Digital Archive</source><creator>ASIF KHAN, M ; KUZNIA, J. N ; BHATTARAI, A. R ; OLSON, D. T</creator><creatorcontrib>ASIF KHAN, M ; KUZNIA, J. N ; BHATTARAI, A. R ; OLSON, D. T</creatorcontrib><description>In this letter we report the fabrication and characterization of a metal semiconductor field effect transistor (MESFET) based on single crystal GaN. The GaN layer was deposited over sapphire substrate using low pressure metalorganic chemical vapor deposition. MESFET devices were fabricated on isolated mesas using TiAu for the source and drain ohmic contacts and silver for the gate Schottky. For devices with a gate length of 4 μm (channel opening, i.e., source to drain separation of 10 μm), a transconductance of 23 mS/mm was obtained at −1 V gate bias. Complete pinch-off was observed for a gate potential of −12 V.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.109549</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville, NY: American Institute of Physics</publisher><subject>Applied sciences ; Electronics ; Exact sciences and technology ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Transistors</subject><ispartof>Applied physics letters, 1993-04, Vol.62 (15), p.1786-1787</ispartof><rights>1993 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c353t-8ec515ff2629cf5a63e5d8e49fe6a83fbf54ec0f75fb797f216538d8e8e83b553</citedby><cites>FETCH-LOGICAL-c353t-8ec515ff2629cf5a63e5d8e49fe6a83fbf54ec0f75fb797f216538d8e8e83b553</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&amp;idt=4749691$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>ASIF KHAN, M</creatorcontrib><creatorcontrib>KUZNIA, J. N</creatorcontrib><creatorcontrib>BHATTARAI, A. R</creatorcontrib><creatorcontrib>OLSON, D. T</creatorcontrib><title>Metal semiconductor field effect transistor based on single crystal GaN</title><title>Applied physics letters</title><description>In this letter we report the fabrication and characterization of a metal semiconductor field effect transistor (MESFET) based on single crystal GaN. The GaN layer was deposited over sapphire substrate using low pressure metalorganic chemical vapor deposition. MESFET devices were fabricated on isolated mesas using TiAu for the source and drain ohmic contacts and silver for the gate Schottky. For devices with a gate length of 4 μm (channel opening, i.e., source to drain separation of 10 μm), a transconductance of 23 mS/mm was obtained at −1 V gate bias. Complete pinch-off was observed for a gate potential of −12 V.</description><subject>Applied sciences</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Transistors</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1993</creationdate><recordtype>article</recordtype><recordid>eNo9kE9LAzEQxYMoWKvgR9iDiJfV_Nkkm6MUrULVi55DNjsjK-luzWwP_fZuaZE5PGb4zYP3GLsW_F5wox7EJE5X7oTNBLe2VELUp2zGOVelcVqcswuin2nVUqkZW77BGFJBsO7i0LfbOA65wA5SWwAixLEYc-ipo_29CQRtMfQFdf13giLmHe2_l-H9kp1hSARXR52zr-enz8VLufpYvi4eV2VUWo1lDVELjSiNdBF1MAp0W0PlEEyoFTaoK4gcrcbGOotSGK3qiZhGNVqrObs9-G7y8LsFGv26owgphR6GLXlphLTSVhN4dwBjHogyoN_kbh3yzgvu90154Q9NTejN0TNQDAmnwLGjf76ylTNOqD_LxWeX</recordid><startdate>19930412</startdate><enddate>19930412</enddate><creator>ASIF KHAN, M</creator><creator>KUZNIA, J. N</creator><creator>BHATTARAI, A. R</creator><creator>OLSON, D. T</creator><general>American Institute of Physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>19930412</creationdate><title>Metal semiconductor field effect transistor based on single crystal GaN</title><author>ASIF KHAN, M ; KUZNIA, J. N ; BHATTARAI, A. R ; OLSON, D. T</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c353t-8ec515ff2629cf5a63e5d8e49fe6a83fbf54ec0f75fb797f216538d8e8e83b553</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1993</creationdate><topic>Applied sciences</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>ASIF KHAN, M</creatorcontrib><creatorcontrib>KUZNIA, J. N</creatorcontrib><creatorcontrib>BHATTARAI, A. R</creatorcontrib><creatorcontrib>OLSON, D. T</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>ASIF KHAN, M</au><au>KUZNIA, J. N</au><au>BHATTARAI, A. R</au><au>OLSON, D. T</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Metal semiconductor field effect transistor based on single crystal GaN</atitle><jtitle>Applied physics letters</jtitle><date>1993-04-12</date><risdate>1993</risdate><volume>62</volume><issue>15</issue><spage>1786</spage><epage>1787</epage><pages>1786-1787</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>In this letter we report the fabrication and characterization of a metal semiconductor field effect transistor (MESFET) based on single crystal GaN. The GaN layer was deposited over sapphire substrate using low pressure metalorganic chemical vapor deposition. MESFET devices were fabricated on isolated mesas using TiAu for the source and drain ohmic contacts and silver for the gate Schottky. For devices with a gate length of 4 μm (channel opening, i.e., source to drain separation of 10 μm), a transconductance of 23 mS/mm was obtained at −1 V gate bias. Complete pinch-off was observed for a gate potential of −12 V.</abstract><cop>Melville, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.109549</doi><tpages>2</tpages></addata></record>
fulltext fulltext
identifier ISSN: 0003-6951
ispartof Applied physics letters, 1993-04, Vol.62 (15), p.1786-1787
issn 0003-6951
1077-3118
language eng
recordid cdi_proquest_miscellaneous_26127274
source AIP Digital Archive
subjects Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
title Metal semiconductor field effect transistor based on single crystal GaN
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-31T14%3A43%3A46IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Metal%20semiconductor%20field%20effect%20transistor%20based%20on%20single%20crystal%20GaN&rft.jtitle=Applied%20physics%20letters&rft.au=ASIF%20KHAN,%20M&rft.date=1993-04-12&rft.volume=62&rft.issue=15&rft.spage=1786&rft.epage=1787&rft.pages=1786-1787&rft.issn=0003-6951&rft.eissn=1077-3118&rft.coden=APPLAB&rft_id=info:doi/10.1063/1.109549&rft_dat=%3Cproquest_cross%3E26127274%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=26127274&rft_id=info:pmid/&rfr_iscdi=true