Low-temperature selective-area deposition of metals : chemical vapor deposition of gold from ethyl(trimethylphosphine)gold(I)
Chemical vapor deposition of high purity gold is demonstrated using ethyl(trimethylphosphine)gold(I) at temperatures as low as room temperature. Total selectivity for growth on atomically clean metallic surfaces in the presence of insulating surfaces is found over a ∼200 °C temperature range and con...
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Veröffentlicht in: | Applied physics letters 1993-03, Vol.62 (13), p.1475-1477 |
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container_title | Applied physics letters |
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creator | BANASZAK HOLL, M. M SEIDLER, P. F KOWALCZYK, S. P MCFEELY, F. R |
description | Chemical vapor deposition of high purity gold is demonstrated using ethyl(trimethylphosphine)gold(I) at temperatures as low as room temperature. Total selectivity for growth on atomically clean metallic surfaces in the presence of insulating surfaces is found over a ∼200 °C temperature range and confirmed with scanning electron microscopy and x-ray photoelectron spectroscopy. A key processing parameter is shown to be ultrahigh vacuum, particularly for growth on reactive metals such as chromium. These results suggest low-temperature selectivity can be extended to other known precursors. |
doi_str_mv | 10.1063/1.108663 |
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These results suggest low-temperature selectivity can be extended to other known precursors.</description><subject>Applied sciences</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Exact sciences and technology</subject><subject>Metals. Metallurgy</subject><subject>Physics</subject><subject>Solid surfaces and solid-solid interfaces</subject><subject>Surface and interface dynamics and vibrations</subject><subject>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><subject>Thin film structure and morphology</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1993</creationdate><recordtype>article</recordtype><recordid>eNpdkE1LAzEURYMoWKvgT8hCpF2MJpNJZuJOih-FghtdD2nmxYnMNGOSVrrwv5va4sLVfQ8Ol8tB6JKSG0oEu6UpKiHYERpRUpYZo7Q6RiNCCMuE5PQUnYXwkV6eMzZC3wv3lUXoB_Aqrj3gAB3oaDeQKQ8KNzC4YKN1K-wM7iGqLuA7rFvorVYd3qjB-X_Uu-sabLzrMcR2202it_3vNbQuDK1dwXSHTObTc3RiUiFcHHKM3h4fXmfP2eLlaT67X2Q6r3jMmDBUFEyahi8LVVRLJXmKnOeaUUZUpXVpyoYLqWQuJW9klVMQXBowFTDNxuh63zt497mGEOveBg1dp1bg1qHOBSUFI2UCJ3tQexeCB1MPabzy25qSeue3pvXeb0KvDp0qJBPGq5W24Y8vhKhkGv0Dio97Xw</recordid><startdate>19930329</startdate><enddate>19930329</enddate><creator>BANASZAK HOLL, M. 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Metallurgy</topic><topic>Physics</topic><topic>Solid surfaces and solid-solid interfaces</topic><topic>Surface and interface dynamics and vibrations</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><topic>Thin film structure and morphology</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>BANASZAK HOLL, M. M</creatorcontrib><creatorcontrib>SEIDLER, P. F</creatorcontrib><creatorcontrib>KOWALCZYK, S. P</creatorcontrib><creatorcontrib>MCFEELY, F. R</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>BANASZAK HOLL, M. M</au><au>SEIDLER, P. 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subjects | Applied sciences Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Metals. Metallurgy Physics Solid surfaces and solid-solid interfaces Surface and interface dynamics and vibrations Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology |
title | Low-temperature selective-area deposition of metals : chemical vapor deposition of gold from ethyl(trimethylphosphine)gold(I) |
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