Low-temperature selective-area deposition of metals : chemical vapor deposition of gold from ethyl(trimethylphosphine)gold(I)

Chemical vapor deposition of high purity gold is demonstrated using ethyl(trimethylphosphine)gold(I) at temperatures as low as room temperature. Total selectivity for growth on atomically clean metallic surfaces in the presence of insulating surfaces is found over a ∼200 °C temperature range and con...

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Veröffentlicht in:Applied physics letters 1993-03, Vol.62 (13), p.1475-1477
Hauptverfasser: BANASZAK HOLL, M. M, SEIDLER, P. F, KOWALCZYK, S. P, MCFEELY, F. R
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container_end_page 1477
container_issue 13
container_start_page 1475
container_title Applied physics letters
container_volume 62
creator BANASZAK HOLL, M. M
SEIDLER, P. F
KOWALCZYK, S. P
MCFEELY, F. R
description Chemical vapor deposition of high purity gold is demonstrated using ethyl(trimethylphosphine)gold(I) at temperatures as low as room temperature. Total selectivity for growth on atomically clean metallic surfaces in the presence of insulating surfaces is found over a ∼200 °C temperature range and confirmed with scanning electron microscopy and x-ray photoelectron spectroscopy. A key processing parameter is shown to be ultrahigh vacuum, particularly for growth on reactive metals such as chromium. These results suggest low-temperature selectivity can be extended to other known precursors.
doi_str_mv 10.1063/1.108663
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subjects Applied sciences
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Metals. Metallurgy
Physics
Solid surfaces and solid-solid interfaces
Surface and interface dynamics and vibrations
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
title Low-temperature selective-area deposition of metals : chemical vapor deposition of gold from ethyl(trimethylphosphine)gold(I)
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