MBE HgCdTe heterostructure p-on-n planar infrared photodiodes
Fabrication of planar Hg sub 1 sub -sub y Cdsub y /Hg sub 1 sub - sub x Cd sub x Te (x < y) photodiodes is described. The material is grown by MBE on lattice-matched CdZnTe substrates. p-on-n planar devices consist of an As-doped p-type epilayer (y approximately 0.28) on a long-wavelength ir n-ty...
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| Veröffentlicht in: | Journal of electronic materials 1993-08, Vol.22 (8), p.1049-1053 |
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| container_end_page | 1053 |
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| container_issue | 8 |
| container_start_page | 1049 |
| container_title | Journal of electronic materials |
| container_volume | 22 |
| creator | ARIAS, J. M PASKO, J. G ZANDIAN, M SHIN, S. H WILLIAMS, G. M BUBULAC, L. O DE WAMES, R. E TENNANT, W. E |
| description | Fabrication of planar Hg sub 1 sub -sub y Cdsub y /Hg sub 1 sub - sub x Cd sub x Te (x < y) photodiodes is described. The material is grown by MBE on lattice-matched CdZnTe substrates. p-on-n planar devices consist of an As-doped p-type epilayer (y approximately 0.28) on a long-wavelength ir n-type epilayer (x=0.22-0.23). The diodes have high performance whose dark currents are diffusion-limited to 52 K. |
| doi_str_mv | 10.1007/BF02817523 |
| format | Article |
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E</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>MBE HgCdTe heterostructure p-on-n planar infrared photodiodes</atitle><jtitle>Journal of electronic materials</jtitle><date>1993-08-01</date><risdate>1993</risdate><volume>22</volume><issue>8</issue><spage>1049</spage><epage>1053</epage><pages>1049-1053</pages><issn>0361-5235</issn><eissn>1543-186X</eissn><coden>JECMA5</coden><abstract>Fabrication of planar Hg sub 1 sub -sub y Cdsub y /Hg sub 1 sub - sub x Cd sub x Te (x < y) photodiodes is described. The material is grown by MBE on lattice-matched CdZnTe substrates. p-on-n planar devices consist of an As-doped p-type epilayer (y approximately 0.28) on a long-wavelength ir n-type epilayer (x=0.22-0.23). The diodes have high performance whose dark currents are diffusion-limited to 52 K.</abstract><cop>New York, NY</cop><pub>Institute of Electrical and Electronics Engineers</pub><doi>10.1007/BF02817523</doi><tpages>5</tpages></addata></record> |
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| issn | 0361-5235 1543-186X |
| language | eng |
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| source | SpringerNature Journals |
| subjects | Applied sciences Electronics Exact sciences and technology Optoelectronic devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices |
| title | MBE HgCdTe heterostructure p-on-n planar infrared photodiodes |
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