MBE HgCdTe heterostructure p-on-n planar infrared photodiodes

MBE HgCdTe heterostructure p-on-n planar infrared photodiodes

Fabrication of planar Hg sub 1 sub -sub y Cdsub y /Hg sub 1 sub - sub x Cd sub x Te (x < y) photodiodes is described. The material is grown by MBE on lattice-matched CdZnTe substrates. p-on-n planar devices consist of an As-doped p-type epilayer (y approximately 0.28) on a long-wavelength ir n-ty...

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Veröffentlicht in:Journal of electronic materials 1993-08, Vol.22 (8), p.1049-1053
Hauptverfasser: ARIAS, J. M, PASKO, J. G, ZANDIAN, M, SHIN, S. H, WILLIAMS, G. M, BUBULAC, L. O, DE WAMES, R. E, TENNANT, W. E
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Electronics
Exact sciences and technology
Optoelectronic devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Zusammenfassung:Fabrication of planar Hg sub 1 sub -sub y Cdsub y /Hg sub 1 sub - sub x Cd sub x Te (x < y) photodiodes is described. The material is grown by MBE on lattice-matched CdZnTe substrates. p-on-n planar devices consist of an As-doped p-type epilayer (y approximately 0.28) on a long-wavelength ir n-type epilayer (x=0.22-0.23). The diodes have high performance whose dark currents are diffusion-limited to 52 K.
ISSN:0361-5235
1543-186X
DOI:10.1007/BF02817523