Large area and rapid thermal zone melting crystallization of silicon films on graphite substrates for photovoltaic use
Crystallized silicon thin films deposited on a low cost substrate have the potential to be applied for thin film solar cells. Silicon films, deposited on graphite substrates by sputtering or by the pyrolytic decomposition of silane (CVD), have been crystallized from the liquid phase. The line shaped...
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| creator | Pauli, M. Doscher, M. Salentiny, G. Homberg, F. Muller, J. |
| description | Crystallized silicon thin films deposited on a low cost substrate have the potential to be applied for thin film solar cells. Silicon films, deposited on graphite substrates by sputtering or by the pyrolytic decomposition of silane (CVD), have been crystallized from the liquid phase. The line shaped molten zone is created by the radiation of a line electron beam and is moved at constant scan velocity (23 mm/s) across the graphite substrate. During the crystallization process silicon carbide forms preferentially at gaseous inclusions in the silicon. Schottky-diodes were fabricated on the crystallized silicon film. The crystallized silicon films were found to be unintentionally p-doped with a dopant concentration of p=5*10/sup 17/ cm/sup -3/ (sputter deposited) and p=8*10/sup 17/ cm/sup -3/ (CVD). The crystallized silicon/graphite interface builds an ohmic contact.< > |
| doi_str_mv | 10.1109/PVSC.1993.347054 |
| format | Conference Proceeding |
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Silicon films, deposited on graphite substrates by sputtering or by the pyrolytic decomposition of silane (CVD), have been crystallized from the liquid phase. The line shaped molten zone is created by the radiation of a line electron beam and is moved at constant scan velocity (23 mm/s) across the graphite substrate. During the crystallization process silicon carbide forms preferentially at gaseous inclusions in the silicon. Schottky-diodes were fabricated on the crystallized silicon film. The crystallized silicon films were found to be unintentionally p-doped with a dopant concentration of p=5*10/sup 17/ cm/sup -3/ (sputter deposited) and p=8*10/sup 17/ cm/sup -3/ (CVD). 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The crystallized silicon/graphite interface builds an ohmic contact.< ></description><subject>Costs</subject><subject>Crystallization</subject><subject>Electron beams</subject><subject>Ohmic contacts</subject><subject>Photovoltaic cells</subject><subject>Semiconductor films</subject><subject>Semiconductor thin films</subject><subject>Silicon carbide</subject><subject>Sputtering</subject><subject>Substrates</subject><isbn>0780312201</isbn><isbn>9780780312203</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1993</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotkEtLAzEUhQMiqLV7cZWVu9Y8ZiaTpRRfUFDwsR3S5KaNZCZjkim0v95APZt7OHz3wj0I3VCypJTI-_fvj9WSSsmXvBKkrs7QFREt4ZQxQi_QPKUfUlTVpJHtJdqvVdwCVhEUVoPBUY3O4LyD2CuPj2EA3IPPbthiHQ8pK-_dUWUXBhwsTs47Xax1vk-4mG3Z37kMOE2blKPKkLANEY-7kMM--KycxlOCa3RulU8w_58z9PX0-Ll6Wazfnl9XD-uFY4TnBW2FbY1irGZaSEOZEYZTbYE1hkgmLTctYby2WnBoNpRXtS1pVQtefgfNZ-judHeM4XeClLveJQ3eqwHClDrWEMl5Kwt4ewIdAHRjdL2Kh-5UIf8D1tlpEw</recordid><startdate>1993</startdate><enddate>1993</enddate><creator>Pauli, M.</creator><creator>Doscher, M.</creator><creator>Salentiny, G.</creator><creator>Homberg, F.</creator><creator>Muller, J.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>1993</creationdate><title>Large area and rapid thermal zone melting crystallization of silicon films on graphite substrates for photovoltaic use</title><author>Pauli, M. ; Doscher, M. ; Salentiny, G. ; Homberg, F. ; Muller, J.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i203t-187f8da2252c79d12d7d31cfe26d0929f3d80235fc73e6b1345f29f4573705ec3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1993</creationdate><topic>Costs</topic><topic>Crystallization</topic><topic>Electron beams</topic><topic>Ohmic contacts</topic><topic>Photovoltaic cells</topic><topic>Semiconductor films</topic><topic>Semiconductor thin films</topic><topic>Silicon carbide</topic><topic>Sputtering</topic><topic>Substrates</topic><toplevel>online_resources</toplevel><creatorcontrib>Pauli, M.</creatorcontrib><creatorcontrib>Doscher, M.</creatorcontrib><creatorcontrib>Salentiny, G.</creatorcontrib><creatorcontrib>Homberg, F.</creatorcontrib><creatorcontrib>Muller, J.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Pauli, M.</au><au>Doscher, M.</au><au>Salentiny, G.</au><au>Homberg, F.</au><au>Muller, J.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Large area and rapid thermal zone melting crystallization of silicon films on graphite substrates for photovoltaic use</atitle><btitle>Conference Record of the Twenty Third IEEE Photovoltaic Specialists Conference - 1993 (Cat. No.93CH3283-9)</btitle><stitle>PVSC</stitle><date>1993</date><risdate>1993</risdate><spage>195</spage><epage>200</epage><pages>195-200</pages><isbn>0780312201</isbn><isbn>9780780312203</isbn><abstract>Crystallized silicon thin films deposited on a low cost substrate have the potential to be applied for thin film solar cells. Silicon films, deposited on graphite substrates by sputtering or by the pyrolytic decomposition of silane (CVD), have been crystallized from the liquid phase. The line shaped molten zone is created by the radiation of a line electron beam and is moved at constant scan velocity (23 mm/s) across the graphite substrate. During the crystallization process silicon carbide forms preferentially at gaseous inclusions in the silicon. Schottky-diodes were fabricated on the crystallized silicon film. The crystallized silicon films were found to be unintentionally p-doped with a dopant concentration of p=5*10/sup 17/ cm/sup -3/ (sputter deposited) and p=8*10/sup 17/ cm/sup -3/ (CVD). The crystallized silicon/graphite interface builds an ohmic contact.< ></abstract><pub>IEEE</pub><doi>10.1109/PVSC.1993.347054</doi><tpages>6</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISBN: 0780312201 |
| ispartof | Conference Record of the Twenty Third IEEE Photovoltaic Specialists Conference - 1993 (Cat. No.93CH3283-9), 1993, p.195-200 |
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| language | eng |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Costs Crystallization Electron beams Ohmic contacts Photovoltaic cells Semiconductor films Semiconductor thin films Silicon carbide Sputtering Substrates |
| title | Large area and rapid thermal zone melting crystallization of silicon films on graphite substrates for photovoltaic use |
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