Manipulating Edge Current in Hexagonal Boron Nitride via Doping and Friction

We map spatially correlated electrical current on the stacking boundaries of pristine and doped hexagonal boron nitride (hBN) to distinguish from its insulating bulk via conductive atomic force microscopy (CAFM). While the pristine edges of hBN show an insulating nature, the O-doped edges reveal a c...

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Veröffentlicht in:	ACS nano 2021-12, Vol.15 (12), p.20203-20213
Hauptverfasser:	Das, Bikash, Maity, Sujan, Paul, Subrata, Dolui, Kapildeb, Paramanik, Subham, Naskar, Sanjib, Mohanty, Smruti Ranjan, Chakraborty, Supriya, Ghosh, Anudeepa, Palit, Mainak, Watanabe, Kenji, Taniguchi, Takashi, Menon, Krishnakumar S. R, Datta, Subhadeep
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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