Growth of native oxide and accumulation of organic matter on bare Si wafer in air

This letter reports the effect of organic matter on the growth of native oxide on a Si surface. Bare Si wafers and Si wafers with native oxide were stored under various conditions in a clean room and the thickness of native oxide was examined. In the case of the bare Si wafers, the native oxide hard...

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Veröffentlicht in:	Japanese Journal of Applied Physics 1993-08, Vol.32 (8A), p.L1031-L1033
Hauptverfasser:	OKADA, C, KOBAYASHI, H, TAKAHASHI, I, RYUTA, J, SHINGYOUJI, T
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Defects and impurities in crystals microstructure Exact sciences and technology Impurities: concentration, distribution, and gradients Physics Structure of solids and liquids crystallography
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container_end_page	L1033
container_issue	8A
container_start_page	L1031
container_title	Japanese Journal of Applied Physics
container_volume	32
creator	OKADA, C KOBAYASHI, H TAKAHASHI, I RYUTA, J SHINGYOUJI, T
description	This letter reports the effect of organic matter on the growth of native oxide on a Si surface. Bare Si wafers and Si wafers with native oxide were stored under various conditions in a clean room and the thickness of native oxide was examined. In the case of the bare Si wafers, the native oxide hardly grew in a closed system but the native oxide grew to 6 Å in an open system when the storage time was 24 h. On the other hand, in the case of Si wafers with native oxide, this suggests that accumulation of organic matter occurs on Si wafers in the open system in the clean room. It was suggested that the accumulation of organic matter on Si wafers facilitates the growth of native oxide.
doi_str_mv	10.1143/jjap.32.l1031
format	Article
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Bare Si wafers and Si wafers with native oxide were stored under various conditions in a clean room and the thickness of native oxide was examined. In the case of the bare Si wafers, the native oxide hardly grew in a closed system but the native oxide grew to 6 Å in an open system when the storage time was 24 h. On the other hand, in the case of Si wafers with native oxide, this suggests that accumulation of organic matter occurs on Si wafers in the open system in the clean room. 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Bare Si wafers and Si wafers with native oxide were stored under various conditions in a clean room and the thickness of native oxide was examined. In the case of the bare Si wafers, the native oxide hardly grew in a closed system but the native oxide grew to 6 Å in an open system when the storage time was 24 h. On the other hand, in the case of Si wafers with native oxide, this suggests that accumulation of organic matter occurs on Si wafers in the open system in the clean room. 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source	IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link
subjects	Condensed matter: structure, mechanical and thermal properties Defects and impurities in crystals microstructure Exact sciences and technology Impurities: concentration, distribution, and gradients Physics Structure of solids and liquids crystallography
title	Growth of native oxide and accumulation of organic matter on bare Si wafer in air
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