Micrograin structure influence on electrical characteristics of sputtered indium tin oxide films
The relationship between micrograin structures and electrical characteristics of sputtered indium tin oxide (ITO) films was investigated. Micrograin structures were observed by a high resolution scanning electron microscope. Electrical characteristics were evaluated by four point probe resistance me...
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| Veröffentlicht in: | Journal of applied physics 1993-12, Vol.74 (11), p.6710-6713 |
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| container_end_page | 6713 |
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| container_issue | 11 |
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| container_title | Journal of applied physics |
| container_volume | 74 |
| creator | HIGUCHI, M UEKUSA, S NAKANO, R YOKOGAWA, K |
| description | The relationship between micrograin structures and electrical characteristics of sputtered indium tin oxide (ITO) films was investigated. Micrograin structures were observed by a high resolution scanning electron microscope. Electrical characteristics were evaluated by four point probe resistance measurement and Hall effect measurement. Low resistivity ITO films had domain structures. One domain consisted of many sputter grains having the same orientation. The resistivity decreased with increasing domain size. The domain boundary might cause scattering for conduction electrons. Therefore, larger domain ITO films had a higher Hall mobility. The minimum resistivity was 1.8×10−4 Ω cm, deposited at a sputtering voltage of −250 V and a 250 °C deposition temperature. The electron conduction mechanism in domain structured ITO films was taken into consideration. |
| doi_str_mv | 10.1063/1.355093 |
| format | Article |
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Micrograin structures were observed by a high resolution scanning electron microscope. Electrical characteristics were evaluated by four point probe resistance measurement and Hall effect measurement. Low resistivity ITO films had domain structures. One domain consisted of many sputter grains having the same orientation. The resistivity decreased with increasing domain size. The domain boundary might cause scattering for conduction electrons. Therefore, larger domain ITO films had a higher Hall mobility. The minimum resistivity was 1.8×10−4 Ω cm, deposited at a sputtering voltage of −250 V and a 250 °C deposition temperature. 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Micrograin structures were observed by a high resolution scanning electron microscope. Electrical characteristics were evaluated by four point probe resistance measurement and Hall effect measurement. Low resistivity ITO films had domain structures. One domain consisted of many sputter grains having the same orientation. The resistivity decreased with increasing domain size. The domain boundary might cause scattering for conduction electrons. Therefore, larger domain ITO films had a higher Hall mobility. The minimum resistivity was 1.8×10−4 Ω cm, deposited at a sputtering voltage of −250 V and a 250 °C deposition temperature. The electron conduction mechanism in domain structured ITO films was taken into consideration.</abstract><cop>Woodbury, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.355093</doi><tpages>4</tpages></addata></record> |
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| subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport phenomena in thin films and low-dimensional structures Exact sciences and technology Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects) Low-field transport and mobility piezoresistance Physics |
| title | Micrograin structure influence on electrical characteristics of sputtered indium tin oxide films |
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