Growth of [211]-oriented InAs/GaAs heterostructures

Ultrathin piezoactive (211)-InAs/GaAs quantum wells are synthesized by molecular beam epitaxy. The growth front is probed in situ by RHEED. The well-ordered (211)-GaAs surface corrugation is lost after deposition of a fractional monolayer of InAs. X-ray diffraction, photoluminescence and photolumine...

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Veröffentlicht in:	Journal of crystal growth 1993-02, Vol.127 (1), p.927-931
Hauptverfasser:	Ilg, Matthias, Brandt, Oliver, Nötzel, Richard, Ploog, Klaus
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties Physics Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties)
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Zusammenfassung:	Ultrathin piezoactive (211)-InAs/GaAs quantum wells are synthesized by molecular beam epitaxy. The growth front is probed in situ by RHEED. The well-ordered (211)-GaAs surface corrugation is lost after deposition of a fractional monolayer of InAs. X-ray diffraction, photoluminescence and photoluminescence excitation spectroscopy show the pronounced influence of In segregation on both the structural and optical properties of these structures. The use of an optimized growth cycle allows us to fabricate structures with optical properties strikingly different from those of corresponding (100) structures.
ISSN:	0022-0248 1873-5002
DOI:	10.1016/0022-0248(93)90762-L