Ta/W/AlO(x)-Al/Ta/Nb Josephson junctions for X-ray detector
We have fabricated a Josephson junction, with an approximately symmetrical gap structure which consists of a Ta/W counter electrode, a Ta/Nb base electrode and an AlO(x)-Al barrier for operation as a superconducting X-ray detector at 0.3 K. A Ta layer is selected due to its long lifetime of quasi-pa...
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Veröffentlicht in: | Japanese Journal of Applied Physics 1995-10, Vol.34 (10B), p.L1352-L1354 |
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container_title | Japanese Journal of Applied Physics |
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creator | Morohashi, Shin'ichi |
description | We have fabricated a Josephson junction, with an approximately symmetrical gap structure which consists of a Ta/W counter electrode, a Ta/Nb base electrode and an AlO(x)-Al barrier for operation as a superconducting X-ray detector at 0.3 K. A Ta layer is selected due to its long lifetime of quasi-particles and high X-ray absorption efficiency. The W layer is selected as a buffer layer for a body centered cubic Ta counter electrode, and the Nb layer is chosen for a body centered cubic Ta base electrode. The Al layer acts as an overlayer for fabricating the AlO(x) barrier. A fabricated junction shows a gap voltage of 1.3 mV, a sharp transition width of less than 50 micro-V, and a small subgap leakage current of 1.5 micro-A. (Author) |
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A Ta layer is selected due to its long lifetime of quasi-particles and high X-ray absorption efficiency. The W layer is selected as a buffer layer for a body centered cubic Ta counter electrode, and the Nb layer is chosen for a body centered cubic Ta base electrode. The Al layer acts as an overlayer for fabricating the AlO(x) barrier. A fabricated junction shows a gap voltage of 1.3 mV, a sharp transition width of less than 50 micro-V, and a small subgap leakage current of 1.5 micro-A. 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A Ta layer is selected due to its long lifetime of quasi-particles and high X-ray absorption efficiency. The W layer is selected as a buffer layer for a body centered cubic Ta counter electrode, and the Nb layer is chosen for a body centered cubic Ta base electrode. The Al layer acts as an overlayer for fabricating the AlO(x) barrier. A fabricated junction shows a gap voltage of 1.3 mV, a sharp transition width of less than 50 micro-V, and a small subgap leakage current of 1.5 micro-A. (Author)</abstract></addata></record> |
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issn | 0021-4922 |
language | eng |
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source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
title | Ta/W/AlO(x)-Al/Ta/Nb Josephson junctions for X-ray detector |
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