High-speed electro-optic modulator based on silicon nitride loaded lithium niobate on an insulator platform
Electro-optic (EO) modulators, which convert signals from the electrical to optical domain plays a key role in modern optical communication systems. Lithium niobate on insulator (LNOI) technology has emerged as a competitive solution to realize high-performance integrated EO modulators. In this Lett...
Gespeichert in:
| Veröffentlicht in: | Optics letters 2021-12, Vol.46 (23), p.5986-5989 |
|---|---|
| Hauptverfasser: | , , , , , , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 5989 |
|---|---|
| container_issue | 23 |
| container_start_page | 5986 |
| container_title | Optics letters |
| container_volume | 46 |
| creator | Zhang, Pu Huang, Haijin Jiang, Yongheng Han, Xu Xiao, Huifu Frigg, Andreas Nguyen, Thach G. Boes, Andreas Ren, Guanghui Su, Yikai Tian, Yonghui Mitchell, Arnan |
| description | Electro-optic (EO) modulators, which convert signals from the electrical to optical domain plays a key role in modern optical communication systems. Lithium niobate on insulator (LNOI) technology has emerged as a competitive solution to realize high-performance integrated EO modulators. In this Letter, we design and experimentally demonstrate a Mach–Zehnder interferometer-based modulator on a silicon nitride loaded LNOI platform, which not only takes full advantage of the excellent EO effect of L i N b O 3 , but also avoids the direct etching of L i N b O 3 thin film. The measured half-wave voltage length product of the fabricated modulator is 2.24 V·cm, and the extinction ratio is ∼ 20 d B . Moreover, the 3 dB EO bandwidth is ∼ 30 G H z , while the modulated data rate for on–off key signals can reach up to 80 Gbps. |
| doi_str_mv | 10.1364/OL.446222 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_2605600778</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2605600778</sourcerecordid><originalsourceid>FETCH-LOGICAL-c396t-4ac1ff9ec1ad249155d14d3a50849c81c088bfd413c696ebc92f71a8994c99f73</originalsourceid><addsrcrecordid>eNpdkEtPwzAQhC0EEqVw4B9E4gKHFDt2nOwRVbykSL3AOXL9oC5OHGznwL_HVXviNNLOt7ujQeiW4BWhnD1uuhVjvKqqM7QgNYWSNcDO0QITxkuoobpEVzHuMca8oXSBvt_s166Mk9aq0E7LFHzpp2RlMXg1O5F8KLYiZtePRbTOyqyjTcEqXTgvVHacTTs7D3nstyLpAynGwo7xtD9lMT4M1-jCCBf1zUmX6PPl-WP9Vnab1_f1U1dKCjyVTEhiDGhJhKoYkLpWhCkqatwykC2RuG23RjFCJQeutxIq0xDRAjAJYBq6RPfHu1PwP7OOqR9slNo5MWo_x77iuOYYN02b0bt_6N7PYczpDlSbnzPgmXo4UjL4GIM2_RTsIMJvT3B_qL3fdP2xdvoHmWt1fw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2608915496</pqid></control><display><type>article</type><title>High-speed electro-optic modulator based on silicon nitride loaded lithium niobate on an insulator platform</title><source>Optica Publishing Group Journals</source><creator>Zhang, Pu ; Huang, Haijin ; Jiang, Yongheng ; Han, Xu ; Xiao, Huifu ; Frigg, Andreas ; Nguyen, Thach G. ; Boes, Andreas ; Ren, Guanghui ; Su, Yikai ; Tian, Yonghui ; Mitchell, Arnan</creator><creatorcontrib>Zhang, Pu ; Huang, Haijin ; Jiang, Yongheng ; Han, Xu ; Xiao, Huifu ; Frigg, Andreas ; Nguyen, Thach G. ; Boes, Andreas ; Ren, Guanghui ; Su, Yikai ; Tian, Yonghui ; Mitchell, Arnan</creatorcontrib><description>Electro-optic (EO) modulators, which convert signals from the electrical to optical domain plays a key role in modern optical communication systems. Lithium niobate on insulator (LNOI) technology has emerged as a competitive solution to realize high-performance integrated EO modulators. In this Letter, we design and experimentally demonstrate a Mach–Zehnder interferometer-based modulator on a silicon nitride loaded LNOI platform, which not only takes full advantage of the excellent EO effect of L i N b O 3 , but also avoids the direct etching of L i N b O 3 thin film. The measured half-wave voltage length product of the fabricated modulator is 2.24 V·cm, and the extinction ratio is ∼ 20 d B . Moreover, the 3 dB EO bandwidth is ∼ 30 G H z , while the modulated data rate for on–off key signals can reach up to 80 Gbps.</description><identifier>ISSN: 0146-9592</identifier><identifier>EISSN: 1539-4794</identifier><identifier>DOI: 10.1364/OL.446222</identifier><language>eng</language><publisher>Washington: Optical Society of America</publisher><subject>Communications systems ; Lithium niobates ; Mach-Zehnder interferometers ; Modulators ; Optical communication ; Optics ; Silicon nitride ; Thin films</subject><ispartof>Optics letters, 2021-12, Vol.46 (23), p.5986-5989</ispartof><rights>Copyright Optical Society of America Dec 1, 2021</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c396t-4ac1ff9ec1ad249155d14d3a50849c81c088bfd413c696ebc92f71a8994c99f73</citedby><cites>FETCH-LOGICAL-c396t-4ac1ff9ec1ad249155d14d3a50849c81c088bfd413c696ebc92f71a8994c99f73</cites><orcidid>0000-0002-9974-2260 ; 0000-0002-9867-8279 ; 0000-0002-2463-2956 ; 0000-0002-5017-4653 ; 0000-0002-1526-8187 ; 0000-0002-8409-5638 ; 0000-0001-8443-3396</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,3258,27924,27925</link.rule.ids></links><search><creatorcontrib>Zhang, Pu</creatorcontrib><creatorcontrib>Huang, Haijin</creatorcontrib><creatorcontrib>Jiang, Yongheng</creatorcontrib><creatorcontrib>Han, Xu</creatorcontrib><creatorcontrib>Xiao, Huifu</creatorcontrib><creatorcontrib>Frigg, Andreas</creatorcontrib><creatorcontrib>Nguyen, Thach G.</creatorcontrib><creatorcontrib>Boes, Andreas</creatorcontrib><creatorcontrib>Ren, Guanghui</creatorcontrib><creatorcontrib>Su, Yikai</creatorcontrib><creatorcontrib>Tian, Yonghui</creatorcontrib><creatorcontrib>Mitchell, Arnan</creatorcontrib><title>High-speed electro-optic modulator based on silicon nitride loaded lithium niobate on an insulator platform</title><title>Optics letters</title><description>Electro-optic (EO) modulators, which convert signals from the electrical to optical domain plays a key role in modern optical communication systems. Lithium niobate on insulator (LNOI) technology has emerged as a competitive solution to realize high-performance integrated EO modulators. In this Letter, we design and experimentally demonstrate a Mach–Zehnder interferometer-based modulator on a silicon nitride loaded LNOI platform, which not only takes full advantage of the excellent EO effect of L i N b O 3 , but also avoids the direct etching of L i N b O 3 thin film. The measured half-wave voltage length product of the fabricated modulator is 2.24 V·cm, and the extinction ratio is ∼ 20 d B . Moreover, the 3 dB EO bandwidth is ∼ 30 G H z , while the modulated data rate for on–off key signals can reach up to 80 Gbps.</description><subject>Communications systems</subject><subject>Lithium niobates</subject><subject>Mach-Zehnder interferometers</subject><subject>Modulators</subject><subject>Optical communication</subject><subject>Optics</subject><subject>Silicon nitride</subject><subject>Thin films</subject><issn>0146-9592</issn><issn>1539-4794</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><recordid>eNpdkEtPwzAQhC0EEqVw4B9E4gKHFDt2nOwRVbykSL3AOXL9oC5OHGznwL_HVXviNNLOt7ujQeiW4BWhnD1uuhVjvKqqM7QgNYWSNcDO0QITxkuoobpEVzHuMca8oXSBvt_s166Mk9aq0E7LFHzpp2RlMXg1O5F8KLYiZtePRbTOyqyjTcEqXTgvVHacTTs7D3nstyLpAynGwo7xtD9lMT4M1-jCCBf1zUmX6PPl-WP9Vnab1_f1U1dKCjyVTEhiDGhJhKoYkLpWhCkqatwykC2RuG23RjFCJQeutxIq0xDRAjAJYBq6RPfHu1PwP7OOqR9slNo5MWo_x77iuOYYN02b0bt_6N7PYczpDlSbnzPgmXo4UjL4GIM2_RTsIMJvT3B_qL3fdP2xdvoHmWt1fw</recordid><startdate>20211201</startdate><enddate>20211201</enddate><creator>Zhang, Pu</creator><creator>Huang, Haijin</creator><creator>Jiang, Yongheng</creator><creator>Han, Xu</creator><creator>Xiao, Huifu</creator><creator>Frigg, Andreas</creator><creator>Nguyen, Thach G.</creator><creator>Boes, Andreas</creator><creator>Ren, Guanghui</creator><creator>Su, Yikai</creator><creator>Tian, Yonghui</creator><creator>Mitchell, Arnan</creator><general>Optical Society of America</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>7X8</scope><orcidid>https://orcid.org/0000-0002-9974-2260</orcidid><orcidid>https://orcid.org/0000-0002-9867-8279</orcidid><orcidid>https://orcid.org/0000-0002-2463-2956</orcidid><orcidid>https://orcid.org/0000-0002-5017-4653</orcidid><orcidid>https://orcid.org/0000-0002-1526-8187</orcidid><orcidid>https://orcid.org/0000-0002-8409-5638</orcidid><orcidid>https://orcid.org/0000-0001-8443-3396</orcidid></search><sort><creationdate>20211201</creationdate><title>High-speed electro-optic modulator based on silicon nitride loaded lithium niobate on an insulator platform</title><author>Zhang, Pu ; Huang, Haijin ; Jiang, Yongheng ; Han, Xu ; Xiao, Huifu ; Frigg, Andreas ; Nguyen, Thach G. ; Boes, Andreas ; Ren, Guanghui ; Su, Yikai ; Tian, Yonghui ; Mitchell, Arnan</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c396t-4ac1ff9ec1ad249155d14d3a50849c81c088bfd413c696ebc92f71a8994c99f73</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><topic>Communications systems</topic><topic>Lithium niobates</topic><topic>Mach-Zehnder interferometers</topic><topic>Modulators</topic><topic>Optical communication</topic><topic>Optics</topic><topic>Silicon nitride</topic><topic>Thin films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zhang, Pu</creatorcontrib><creatorcontrib>Huang, Haijin</creatorcontrib><creatorcontrib>Jiang, Yongheng</creatorcontrib><creatorcontrib>Han, Xu</creatorcontrib><creatorcontrib>Xiao, Huifu</creatorcontrib><creatorcontrib>Frigg, Andreas</creatorcontrib><creatorcontrib>Nguyen, Thach G.</creatorcontrib><creatorcontrib>Boes, Andreas</creatorcontrib><creatorcontrib>Ren, Guanghui</creatorcontrib><creatorcontrib>Su, Yikai</creatorcontrib><creatorcontrib>Tian, Yonghui</creatorcontrib><creatorcontrib>Mitchell, Arnan</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>MEDLINE - Academic</collection><jtitle>Optics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zhang, Pu</au><au>Huang, Haijin</au><au>Jiang, Yongheng</au><au>Han, Xu</au><au>Xiao, Huifu</au><au>Frigg, Andreas</au><au>Nguyen, Thach G.</au><au>Boes, Andreas</au><au>Ren, Guanghui</au><au>Su, Yikai</au><au>Tian, Yonghui</au><au>Mitchell, Arnan</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High-speed electro-optic modulator based on silicon nitride loaded lithium niobate on an insulator platform</atitle><jtitle>Optics letters</jtitle><date>2021-12-01</date><risdate>2021</risdate><volume>46</volume><issue>23</issue><spage>5986</spage><epage>5989</epage><pages>5986-5989</pages><issn>0146-9592</issn><eissn>1539-4794</eissn><abstract>Electro-optic (EO) modulators, which convert signals from the electrical to optical domain plays a key role in modern optical communication systems. Lithium niobate on insulator (LNOI) technology has emerged as a competitive solution to realize high-performance integrated EO modulators. In this Letter, we design and experimentally demonstrate a Mach–Zehnder interferometer-based modulator on a silicon nitride loaded LNOI platform, which not only takes full advantage of the excellent EO effect of L i N b O 3 , but also avoids the direct etching of L i N b O 3 thin film. The measured half-wave voltage length product of the fabricated modulator is 2.24 V·cm, and the extinction ratio is ∼ 20 d B . Moreover, the 3 dB EO bandwidth is ∼ 30 G H z , while the modulated data rate for on–off key signals can reach up to 80 Gbps.</abstract><cop>Washington</cop><pub>Optical Society of America</pub><doi>10.1364/OL.446222</doi><tpages>4</tpages><orcidid>https://orcid.org/0000-0002-9974-2260</orcidid><orcidid>https://orcid.org/0000-0002-9867-8279</orcidid><orcidid>https://orcid.org/0000-0002-2463-2956</orcidid><orcidid>https://orcid.org/0000-0002-5017-4653</orcidid><orcidid>https://orcid.org/0000-0002-1526-8187</orcidid><orcidid>https://orcid.org/0000-0002-8409-5638</orcidid><orcidid>https://orcid.org/0000-0001-8443-3396</orcidid></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0146-9592 |
| ispartof | Optics letters, 2021-12, Vol.46 (23), p.5986-5989 |
| issn | 0146-9592 1539-4794 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_2605600778 |
| source | Optica Publishing Group Journals |
| subjects | Communications systems Lithium niobates Mach-Zehnder interferometers Modulators Optical communication Optics Silicon nitride Thin films |
| title | High-speed electro-optic modulator based on silicon nitride loaded lithium niobate on an insulator platform |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-28T02%3A45%3A09IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=High-speed%20electro-optic%20modulator%20based%20on%20silicon%20nitride%20loaded%20lithium%20niobate%20on%20an%20insulator%20platform&rft.jtitle=Optics%20letters&rft.au=Zhang,%20Pu&rft.date=2021-12-01&rft.volume=46&rft.issue=23&rft.spage=5986&rft.epage=5989&rft.pages=5986-5989&rft.issn=0146-9592&rft.eissn=1539-4794&rft_id=info:doi/10.1364/OL.446222&rft_dat=%3Cproquest_cross%3E2605600778%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2608915496&rft_id=info:pmid/&rfr_iscdi=true |