First observation of EL2-like defect levels in annealed [low-temperature] LT GaAs

First observation of EL2-like defect levels in annealed [low-temperature] LT GaAs

Nonstoichiometric As-rich GaAs grown at low temp. by MBE is semiinsulating after high-temp. annealing. Photocurrent measurements at 0.75-1.5 eV at 8 K reveal unique features to EL2 level: photoquenching, characteristic photoionization transitions to conduction band minima, and presence of a broad ba...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Journal of electronic materials 1993-01, Vol.22 (12), p.1499-1502
Hauptverfasser: Jager, N D, Verma, Ashish K, Dreszer, P, Newman, N, Liliental-Weber, Z, Van Schilfgaarde, M
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 1502
container_issue 12
container_start_page 1499
container_title Journal of electronic materials
container_volume 22
creator Jager, N D
Verma, Ashish K
Dreszer, P
Newman, N
Liliental-Weber, Z
Van Schilfgaarde, M
description Nonstoichiometric As-rich GaAs grown at low temp. by MBE is semiinsulating after high-temp. annealing. Photocurrent measurements at 0.75-1.5 eV at 8 K reveal unique features to EL2 level: photoquenching, characteristic photoionization transitions to conduction band minima, and presence of a broad band due to effect of autoionization from the excited state.
format Article
fullrecord <record><control><sourceid>proquest</sourceid><recordid>TN_cdi_proquest_miscellaneous_26039833</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>26039833</sourcerecordid><originalsourceid>FETCH-proquest_miscellaneous_260398333</originalsourceid><addsrcrecordid>eNqNyrsOgjAUANAOmoiPf7iTW5NCA8HRGNCBxYTNGFLhklRLi70Ff9_FD3A6y1mwSMgs5mki0xVbEz2FiNM4jyN2LbWnAO5B6GcVtLPgeiiqhBv9QuiwxzaAwRkNgbagrEVlsIObcR8ecBjRqzB5vENVw1kdacuWvTKEu58bti-L-nTho3fvCSk0g6YWjVEW3URNkgl5yKWUf8cvbARBEQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>26039833</pqid></control><display><type>article</type><title>First observation of EL2-like defect levels in annealed [low-temperature] LT GaAs</title><source>SpringerNature Journals</source><creator>Jager, N D ; Verma, Ashish K ; Dreszer, P ; Newman, N ; Liliental-Weber, Z ; Van Schilfgaarde, M</creator><creatorcontrib>Jager, N D ; Verma, Ashish K ; Dreszer, P ; Newman, N ; Liliental-Weber, Z ; Van Schilfgaarde, M</creatorcontrib><description>Nonstoichiometric As-rich GaAs grown at low temp. by MBE is semiinsulating after high-temp. annealing. Photocurrent measurements at 0.75-1.5 eV at 8 K reveal unique features to EL2 level: photoquenching, characteristic photoionization transitions to conduction band minima, and presence of a broad band due to effect of autoionization from the excited state.</description><identifier>ISSN: 0361-5235</identifier><language>eng</language><ispartof>Journal of electronic materials, 1993-01, Vol.22 (12), p.1499-1502</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>315,781,785</link.rule.ids></links><search><creatorcontrib>Jager, N D</creatorcontrib><creatorcontrib>Verma, Ashish K</creatorcontrib><creatorcontrib>Dreszer, P</creatorcontrib><creatorcontrib>Newman, N</creatorcontrib><creatorcontrib>Liliental-Weber, Z</creatorcontrib><creatorcontrib>Van Schilfgaarde, M</creatorcontrib><title>First observation of EL2-like defect levels in annealed [low-temperature] LT GaAs</title><title>Journal of electronic materials</title><description>Nonstoichiometric As-rich GaAs grown at low temp. by MBE is semiinsulating after high-temp. annealing. Photocurrent measurements at 0.75-1.5 eV at 8 K reveal unique features to EL2 level: photoquenching, characteristic photoionization transitions to conduction band minima, and presence of a broad band due to effect of autoionization from the excited state.</description><issn>0361-5235</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1993</creationdate><recordtype>article</recordtype><recordid>eNqNyrsOgjAUANAOmoiPf7iTW5NCA8HRGNCBxYTNGFLhklRLi70Ff9_FD3A6y1mwSMgs5mki0xVbEz2FiNM4jyN2LbWnAO5B6GcVtLPgeiiqhBv9QuiwxzaAwRkNgbagrEVlsIObcR8ecBjRqzB5vENVw1kdacuWvTKEu58bti-L-nTho3fvCSk0g6YWjVEW3URNkgl5yKWUf8cvbARBEQ</recordid><startdate>19930101</startdate><enddate>19930101</enddate><creator>Jager, N D</creator><creator>Verma, Ashish K</creator><creator>Dreszer, P</creator><creator>Newman, N</creator><creator>Liliental-Weber, Z</creator><creator>Van Schilfgaarde, M</creator><scope>7QQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>19930101</creationdate><title>First observation of EL2-like defect levels in annealed [low-temperature] LT GaAs</title><author>Jager, N D ; Verma, Ashish K ; Dreszer, P ; Newman, N ; Liliental-Weber, Z ; Van Schilfgaarde, M</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-proquest_miscellaneous_260398333</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1993</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Jager, N D</creatorcontrib><creatorcontrib>Verma, Ashish K</creatorcontrib><creatorcontrib>Dreszer, P</creatorcontrib><creatorcontrib>Newman, N</creatorcontrib><creatorcontrib>Liliental-Weber, Z</creatorcontrib><creatorcontrib>Van Schilfgaarde, M</creatorcontrib><collection>Ceramic Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Journal of electronic materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Jager, N D</au><au>Verma, Ashish K</au><au>Dreszer, P</au><au>Newman, N</au><au>Liliental-Weber, Z</au><au>Van Schilfgaarde, M</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>First observation of EL2-like defect levels in annealed [low-temperature] LT GaAs</atitle><jtitle>Journal of electronic materials</jtitle><date>1993-01-01</date><risdate>1993</risdate><volume>22</volume><issue>12</issue><spage>1499</spage><epage>1502</epage><pages>1499-1502</pages><issn>0361-5235</issn><abstract>Nonstoichiometric As-rich GaAs grown at low temp. by MBE is semiinsulating after high-temp. annealing. Photocurrent measurements at 0.75-1.5 eV at 8 K reveal unique features to EL2 level: photoquenching, characteristic photoionization transitions to conduction band minima, and presence of a broad band due to effect of autoionization from the excited state.</abstract></addata></record>
fulltext fulltext
identifier ISSN: 0361-5235
ispartof Journal of electronic materials, 1993-01, Vol.22 (12), p.1499-1502
issn 0361-5235
language eng
recordid cdi_proquest_miscellaneous_26039833
source SpringerNature Journals
title First observation of EL2-like defect levels in annealed [low-temperature] LT GaAs
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-14T07%3A52%3A47IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=First%20observation%20of%20EL2-like%20defect%20levels%20in%20annealed%20%5Blow-temperature%5D%20LT%20GaAs&rft.jtitle=Journal%20of%20electronic%20materials&rft.au=Jager,%20N%20D&rft.date=1993-01-01&rft.volume=22&rft.issue=12&rft.spage=1499&rft.epage=1502&rft.pages=1499-1502&rft.issn=0361-5235&rft_id=info:doi/&rft_dat=%3Cproquest%3E26039833%3C/proquest%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=26039833&rft_id=info:pmid/&rfr_iscdi=true