First observation of EL2-like defect levels in annealed [low-temperature] LT GaAs

First observation of EL2-like defect levels in annealed [low-temperature] LT GaAs

Nonstoichiometric As-rich GaAs grown at low temp. by MBE is semiinsulating after high-temp. annealing. Photocurrent measurements at 0.75-1.5 eV at 8 K reveal unique features to EL2 level: photoquenching, characteristic photoionization transitions to conduction band minima, and presence of a broad ba...

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Veröffentlicht in:Journal of electronic materials 1993-01, Vol.22 (12), p.1499-1502
Hauptverfasser: Jager, N D, Verma, Ashish K, Dreszer, P, Newman, N, Liliental-Weber, Z, Van Schilfgaarde, M
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Sprache:eng
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Zusammenfassung:Nonstoichiometric As-rich GaAs grown at low temp. by MBE is semiinsulating after high-temp. annealing. Photocurrent measurements at 0.75-1.5 eV at 8 K reveal unique features to EL2 level: photoquenching, characteristic photoionization transitions to conduction band minima, and presence of a broad band due to effect of autoionization from the excited state.
ISSN:0361-5235