Fabrication of high mobility two-dimensional electron and hole gases in GeSi/Si
A procedure for the fabrication of two-dimensional carrier (electron and hole) gases in modulation doped GeSi/Si heterostructures is presented. The best 4.2 K mobilities measured for the two-dimensional electron and hole gases are 180 000 cm2/V s and 18 000 cm2/V s, respectively. Recently, two-dimen...
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| Veröffentlicht in: | Journal of applied physics 1993-06, Vol.73 (12), p.8364-8370 |
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| container_end_page | 8370 |
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| container_issue | 12 |
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| container_title | Journal of applied physics |
| container_volume | 73 |
| creator | XIE, Y. H FITZGERALD, E. A MONROE, D SILVERMAN, P. J WATSON, G. P |
| description | A procedure for the fabrication of two-dimensional carrier (electron and hole) gases in modulation doped GeSi/Si heterostructures is presented. The best 4.2 K mobilities measured for the two-dimensional electron and hole gases are 180 000 cm2/V s and 18 000 cm2/V s, respectively. Recently, two-dimensional hole gases with mobilities as high as 55 000 cm2/V s have been obtained. The carrier gases are fabricated on top of relaxed, compositionally graded GexSi1−x buffer layers with low threading dislocation densities (≊106 cm−2). Experimental evidence indicates that the function of the graded buffer is to promote dislocation propagation while suppressing nucleation. A comparative analysis is carried out for two dimensional electron gases in GeSi/Si/GeSi and in AlGaAs/GaAs structures. Although molecular beam epitaxy is used to grow the samples, the principle discussed here is independent of growth technique. |
| doi_str_mv | 10.1063/1.353429 |
| format | Article |
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H ; FITZGERALD, E. A ; MONROE, D ; SILVERMAN, P. J ; WATSON, G. P</creator><creatorcontrib>XIE, Y. H ; FITZGERALD, E. A ; MONROE, D ; SILVERMAN, P. J ; WATSON, G. P</creatorcontrib><description>A procedure for the fabrication of two-dimensional carrier (electron and hole) gases in modulation doped GeSi/Si heterostructures is presented. The best 4.2 K mobilities measured for the two-dimensional electron and hole gases are 180 000 cm2/V s and 18 000 cm2/V s, respectively. Recently, two-dimensional hole gases with mobilities as high as 55 000 cm2/V s have been obtained. The carrier gases are fabricated on top of relaxed, compositionally graded GexSi1−x buffer layers with low threading dislocation densities (≊106 cm−2). Experimental evidence indicates that the function of the graded buffer is to promote dislocation propagation while suppressing nucleation. A comparative analysis is carried out for two dimensional electron gases in GeSi/Si/GeSi and in AlGaAs/GaAs structures. 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Experimental evidence indicates that the function of the graded buffer is to promote dislocation propagation while suppressing nucleation. A comparative analysis is carried out for two dimensional electron gases in GeSi/Si/GeSi and in AlGaAs/GaAs structures. 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Experimental evidence indicates that the function of the graded buffer is to promote dislocation propagation while suppressing nucleation. A comparative analysis is carried out for two dimensional electron gases in GeSi/Si/GeSi and in AlGaAs/GaAs structures. Although molecular beam epitaxy is used to grow the samples, the principle discussed here is independent of growth technique.</abstract><cop>Woodbury, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.353429</doi><tpages>7</tpages></addata></record> |
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| subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport in interface structures Exact sciences and technology Physics |
| title | Fabrication of high mobility two-dimensional electron and hole gases in GeSi/Si |
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