Etching of self-sharpening (338) tips in (100) silicon

Numerous papers have appeared in recent years describing various methods of achieving nonoscale tips for vacuum microelectronics. In single-crystalline (100) Si, wet anisotropic etching (KOH in this case) has been affected by the truncation, or blunting, of the tip when the masking oxide or nitride...

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Veröffentlicht in:	Journal of micromechanics and microengineering 1995-03, Vol.5 (1), p.18-24
Hauptverfasser:	Liu, Jin-Huai, Betzner, T M, Henderson, H Thurman
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials science Microelectronics: LSI, VLSI, ULSI integrated circuit fabrication technology Physics Solid-fluid interfaces Surface treatments Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties)
Online-Zugang:	Volltext
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