Cr-doped GaAs/AlGaAs semi-insulating multiple quantum well photorefractive devices

Semi-insulating multiple quantum well photorefractive devices using GaAs/Al0.29Ga0.71As with an electric field applied perpendicular to the layers are demonstrated. Semi-insulating behavior is obtained by doping with Cr(1016/cm3) during epitaxial growth of the material. Diffraction efficiencies as h...

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Veröffentlicht in:	Applied physics letters 1993-02, Vol.62 (5), p.464-466
Hauptverfasser:	PARTOVI, A, GLASS, A. M, OLSON, D. H, ZYDZIK, G. J, O'BRYAN, H. M, CHIU, T. H, KNOX, W. H
Format:	Artikel
Sprache:	eng
Schlagworte:	Exact sciences and technology Fundamental areas of phenomenology (including applications) Imaging and optical processing Optics Physics
Online-Zugang:	Volltext
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