Demonstration of Y1Ba2Cu3O(7-delta) and complementary metal-oxide-semiconductor device fabrication on the same sapphire substrate

We report the first fabrication of active semiconductor and high-temperature superconducting devices on the same substrate. Test structures of complementary MOS transistors were fabricated on the same sapphire substrate as test structures of Y1Ba2Cu3O(7-delta) flux-flow transistors, and separately,...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Applied physics letters 1993-08, Vol.63 (9), p.1282-1284
Hauptverfasser:	Burns, M. J., De La Houssaye, P. R., Russell, S. D., Garcia, G. A., Clayton, S. R., Ruby, W. S., Lee, L. P.
Format:	Artikel
Sprache:	eng
Schlagworte:	Electronics And Electrical Engineering
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!