Band structure and semiconducting properties of FeSi

The semiconductor-type band structure characteristics of FeSi are presented. The results of linear augmented-plane-wave band calculations for cubic FeSi predicted a small (approx0.11 eV) indirect semiconductor gap that agreed well with the empirical estimates (approx0.13 eV). The calculations were c...

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Veröffentlicht in:	Physical review. B, Condensed matter Condensed matter, 1993-05, Vol.47 (20), p.13114-13119
Hauptverfasser:	MATTHEISS, L. F, HAMANN, D. R
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Condensed matter: electronic structure, electrical, magnetic, and optical properties Electron density of states and band structure of crystalline solids Electron states Exact sciences and technology Metals. Metallurgy Physics
Online-Zugang:	Volltext
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