Epitaxial growth and electrical characteristics of β-SiC on Si by low-pressure rapid thermal chemical vapor deposition

The structural and electrical properties of β-SiC thin films grown on a (100) Si substrate by low pressure rapid thermal chemical vapor deposition (LP-RTCVD) at as low as 2.5 Torr are reported. SiC growth was achieved by the reaction of SiH 4 (5% in H 2 ) and C 3 H 8 (5% in H 2 ) from 1100 to 1250°...

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Veröffentlicht in:	Japanese Journal of Applied Physics 1995-03, Vol.34 (3), p.1447-1450
Hauptverfasser:	Hwang, Jun-Dar, Fang, Yean-Kuen, Song, You-Joung, Dun-Nian Yaung, Dun-Nian Yaung
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Electrical properties of specific thin films Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Exact sciences and technology Other inorganic semiconductors Physics Structure and morphology thickness Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology
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