10.8% efficient one-square-foot-area multijunction amorphous silicon alloy photovoltaic module

Double-junction, dual-bandgap, thin-film amorphous silicon photovoltaic modules of aperture area ) 900 cm super(2) have been fabricated. The n, i,p layers been deposited by conventional rf glow-discharge technique on textured Ag/ZnO back reflectors prepared in stainless steel substrates. The bottom...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Banerjee, A, Chen, E, Clough, R, Glatfelter, T, Guha, S, Hammond, G, Hoffman, K, Hopsoff, M, Jackett, N, Lycette, M, Noch, J, Palmer, T, Parker, K, Rosenstein, I, Wolf, D, Xu, X
Format: Tagungsbericht
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Double-junction, dual-bandgap, thin-film amorphous silicon photovoltaic modules of aperture area ) 900 cm super(2) have been fabricated. The n, i,p layers been deposited by conventional rf glow-discharge technique on textured Ag/ZnO back reflectors prepared in stainless steel substrates. The bottom cell employs a graded bandgap a-SiGe alloy i-layer, and the top cell has an a-Si alloy i layer. The encapsulated monolithic modules exhibit initial aperture-area conversion efficiency as high as 10.8%, as measured under a Spire pulsed solar simulator using a peak detector circuit. The high efficiency has been obtained by (1) improving the `tunnel'-junction characteristics between the two component cells, (2) improving the uniformity, and (3) reducing module losses.