X-ray photoelectron spectroscopy of initial stages of nucleation and growth of diamond thin films during plasma assisted chemical vapor deposition
We have carried out x-ray photoelectron spectroscopy on diamond thin films deposited by microwave assisted chemical vapor deposition technique using a H2-CH4 plasma. Films grown for different lengths of time, from 1 min to several hours, were analyzed for the surface composition in the C 1s and Si 2...
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| Veröffentlicht in: | Applied physics letters 1992-05, Vol.60 (19), p.2344-2346 |
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| container_title | Applied physics letters |
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| creator | WAITE, M. M SHAH, S. I |
| description | We have carried out x-ray photoelectron spectroscopy on diamond thin films deposited by microwave assisted chemical vapor deposition technique using a H2-CH4 plasma. Films grown for different lengths of time, from 1 min to several hours, were analyzed for the surface composition in the C 1s and Si 2p regions. The results indicate the presence of SiC in the initial stage of nucleation due to the carbon interaction with the Si substrate. Graphite starts to form in early stages of nucleation as the substrate becomes supersaturated with carbon. A diamond peak starts to appear after the incubation period and a simultaneous decrease in the carbide and graphite peak intensities was observed. Graphite is preferentially etched during the growth but SiC remains as an impurity even after several hours of deposition. |
| doi_str_mv | 10.1063/1.107474 |
| format | Article |
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M ; SHAH, S. I</creator><creatorcontrib>WAITE, M. M ; SHAH, S. I</creatorcontrib><description>We have carried out x-ray photoelectron spectroscopy on diamond thin films deposited by microwave assisted chemical vapor deposition technique using a H2-CH4 plasma. Films grown for different lengths of time, from 1 min to several hours, were analyzed for the surface composition in the C 1s and Si 2p regions. The results indicate the presence of SiC in the initial stage of nucleation due to the carbon interaction with the Si substrate. Graphite starts to form in early stages of nucleation as the substrate becomes supersaturated with carbon. A diamond peak starts to appear after the incubation period and a simultaneous decrease in the carbide and graphite peak intensities was observed. Graphite is preferentially etched during the growth but SiC remains as an impurity even after several hours of deposition.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.107474</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville, NY: American Institute of Physics</publisher><subject>Condensed matter: structure, mechanical and thermal properties ; Exact sciences and technology ; Physics ; Solid surfaces and solid-solid interfaces ; Surface and interface dynamics and vibrations ; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) ; Thin film structure and morphology</subject><ispartof>Applied physics letters, 1992-05, Vol.60 (19), p.2344-2346</ispartof><rights>1992 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c353t-6ad831232537d1d0a85be8316e0b0bf639d371335c6559ead6d988c6bca7ad433</citedby><cites>FETCH-LOGICAL-c353t-6ad831232537d1d0a85be8316e0b0bf639d371335c6559ead6d988c6bca7ad433</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,777,781,27905,27906</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=5267414$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>WAITE, M. 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Graphite is preferentially etched during the growth but SiC remains as an impurity even after several hours of deposition.</description><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Exact sciences and technology</subject><subject>Physics</subject><subject>Solid surfaces and solid-solid interfaces</subject><subject>Surface and interface dynamics and vibrations</subject><subject>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><subject>Thin film structure and morphology</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1992</creationdate><recordtype>article</recordtype><recordid>eNo9kN1KJDEQhYMoOP6Aj5ALWfamNenqpLsvRdYfELxR8K6pSdIzke5Om8rsMq_hE5vZEa_q1KmPA3UYu5DiSgoN1zKPuqqrA7bIoi5AyuaQLYQQUOhWyWN2QvSeV1UCLNjnWxFxy-d1SMENzqQYJk7zf0EmzFseeu4nnzwOnBKuHO2caWMGh8lnGCfLVzH8S-vdwXocQ3bS2k-898NI3G6in1Z8HpBG5EjkKTnLzdqN3uTUvziHyK2bA_ld4hk76nEgd_49T9nr3Z-X24fi6fn-8fbmqTCgIBUabQOyhFJBbaUV2Kily452YimWvYbWQi0BlNFKtQ6ttm3TGL00WKOtAE7Zr33uHMPHxlHqRk_GDQNOLmyoK1VbKWjKDP7egyZ3QtH13Rz9iHHbSdHtSu9kty89o5ffmUj5tz7iZDz98KrUdSUr-AIweoPc</recordid><startdate>19920511</startdate><enddate>19920511</enddate><creator>WAITE, M. 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I</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c353t-6ad831232537d1d0a85be8316e0b0bf639d371335c6559ead6d988c6bca7ad433</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1992</creationdate><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Exact sciences and technology</topic><topic>Physics</topic><topic>Solid surfaces and solid-solid interfaces</topic><topic>Surface and interface dynamics and vibrations</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><topic>Thin film structure and morphology</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>WAITE, M. M</creatorcontrib><creatorcontrib>SHAH, S. I</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>WAITE, M. M</au><au>SHAH, S. I</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>X-ray photoelectron spectroscopy of initial stages of nucleation and growth of diamond thin films during plasma assisted chemical vapor deposition</atitle><jtitle>Applied physics letters</jtitle><date>1992-05-11</date><risdate>1992</risdate><volume>60</volume><issue>19</issue><spage>2344</spage><epage>2346</epage><pages>2344-2346</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>We have carried out x-ray photoelectron spectroscopy on diamond thin films deposited by microwave assisted chemical vapor deposition technique using a H2-CH4 plasma. Films grown for different lengths of time, from 1 min to several hours, were analyzed for the surface composition in the C 1s and Si 2p regions. The results indicate the presence of SiC in the initial stage of nucleation due to the carbon interaction with the Si substrate. Graphite starts to form in early stages of nucleation as the substrate becomes supersaturated with carbon. A diamond peak starts to appear after the incubation period and a simultaneous decrease in the carbide and graphite peak intensities was observed. Graphite is preferentially etched during the growth but SiC remains as an impurity even after several hours of deposition.</abstract><cop>Melville, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.107474</doi><tpages>3</tpages></addata></record> |
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| ispartof | Applied physics letters, 1992-05, Vol.60 (19), p.2344-2346 |
| issn | 0003-6951 1077-3118 |
| language | eng |
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| source | AIP Digital Archive |
| subjects | Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Physics Solid surfaces and solid-solid interfaces Surface and interface dynamics and vibrations Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology |
| title | X-ray photoelectron spectroscopy of initial stages of nucleation and growth of diamond thin films during plasma assisted chemical vapor deposition |
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