Barrier heights of Schottky junctions on n-InP treated with phosphine plasma
Surface treatment of n-InP by phosphine (PH 3 ) plasma is carried out to modify the surface properties. It is observed from Kelvin probe measurements that the surface Fermi level shifts near the conduction band edge after PH 3 plasma treatment, while the surface Fermi level is located around 0.4 eV...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 1993, Vol.32 (9A), p.L1196-L1199 |
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| container_end_page | L1199 |
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| container_issue | 9A |
| container_start_page | L1196 |
| container_title | Japanese Journal of Applied Physics |
| container_volume | 32 |
| creator | SUGINO, T SAKAMOTO, Y SUMIGUCHI, T NOMOTO, K SHIRAFUJI, J |
| description | Surface treatment of n-InP by phosphine (PH
3
) plasma is carried out to modify the surface properties. It is observed from Kelvin probe measurements that the surface Fermi level shifts near the conduction band edge after PH
3
plasma treatment, while the surface Fermi level is located around 0.4 eV below the conduction band edge for a surface wet-etched before PH
3
plasma treatment. A funneling metal-insulator-semiconductor (MIS) Schottky structure is formed on PH
3
-plasma-treated InP to evaluate the treated surface. The Schottky barrier height evaluated from the Richardson plot is found to depend strongly on the metal work function. This suggests that the surface state density pinning the surface Fermi level is profoundly reduced due to PH
3
plasma treatment. |
| doi_str_mv | 10.1143/JJAP.32.L1196 |
| format | Article |
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3
) plasma is carried out to modify the surface properties. It is observed from Kelvin probe measurements that the surface Fermi level shifts near the conduction band edge after PH
3
plasma treatment, while the surface Fermi level is located around 0.4 eV below the conduction band edge for a surface wet-etched before PH
3
plasma treatment. A funneling metal-insulator-semiconductor (MIS) Schottky structure is formed on PH
3
-plasma-treated InP to evaluate the treated surface. The Schottky barrier height evaluated from the Richardson plot is found to depend strongly on the metal work function. This suggests that the surface state density pinning the surface Fermi level is profoundly reduced due to PH
3
plasma treatment.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.1143/JJAP.32.L1196</identifier><identifier>CODEN: JJAPA5</identifier><language>eng</language><publisher>Tokyo: Japanese journal of applied physics</publisher><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures ; Exact sciences and technology ; Physics ; Surface double layers, schottky barriers, and work functions</subject><ispartof>Japanese Journal of Applied Physics, 1993, Vol.32 (9A), p.L1196-L1199</ispartof><rights>1993 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c324t-18fde668b61e6c9c9e4da3eed7f8f966c84544eecfb81a333fac8877538bb6003</citedby><cites>FETCH-LOGICAL-c324t-18fde668b61e6c9c9e4da3eed7f8f966c84544eecfb81a333fac8877538bb6003</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,4009,27902,27903,27904</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=4880810$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>SUGINO, T</creatorcontrib><creatorcontrib>SAKAMOTO, Y</creatorcontrib><creatorcontrib>SUMIGUCHI, T</creatorcontrib><creatorcontrib>NOMOTO, K</creatorcontrib><creatorcontrib>SHIRAFUJI, J</creatorcontrib><title>Barrier heights of Schottky junctions on n-InP treated with phosphine plasma</title><title>Japanese Journal of Applied Physics</title><description>Surface treatment of n-InP by phosphine (PH
3
) plasma is carried out to modify the surface properties. It is observed from Kelvin probe measurements that the surface Fermi level shifts near the conduction band edge after PH
3
plasma treatment, while the surface Fermi level is located around 0.4 eV below the conduction band edge for a surface wet-etched before PH
3
plasma treatment. A funneling metal-insulator-semiconductor (MIS) Schottky structure is formed on PH
3
-plasma-treated InP to evaluate the treated surface. The Schottky barrier height evaluated from the Richardson plot is found to depend strongly on the metal work function. This suggests that the surface state density pinning the surface Fermi level is profoundly reduced due to PH
3
plasma treatment.</description><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</subject><subject>Exact sciences and technology</subject><subject>Physics</subject><subject>Surface double layers, schottky barriers, and work functions</subject><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1993</creationdate><recordtype>article</recordtype><recordid>eNo9kDtPwzAUhS0EEqUwsntAbCl-xXHGgni0ikQlYI4c55qkpE6wXaH-e1JaMR3do--e4UPompIZpYLfLZfz1YyzWUFpLk_QhHKRJYLI9BRNCGE0ETlj5-gihPV4ylTQCSrutfcteNxA-9nEgHuL30zTx_i1w-utM7Ht3dg67JKFW-HoQUeo8U8bGzw0fRia1gEeOh02-hKdWd0FuDrmFH08Pb4_vCTF6_PiYV4khjMRE6psDVKqSlKQJjc5iFpzgDqzyuZSGiVSIQCMrRTVnHOrjVJZlnJVVZIQPkW3h93B999bCLHctMFA12kH_TaULM15TlI2gskBNL4PwYMtB99utN-VlJR7Z-XeWclZ-eds5G-OwzoY3VmvnWnD_5NQiihK-C89JGx9</recordid><startdate>1993</startdate><enddate>1993</enddate><creator>SUGINO, T</creator><creator>SAKAMOTO, Y</creator><creator>SUMIGUCHI, T</creator><creator>NOMOTO, K</creator><creator>SHIRAFUJI, J</creator><general>Japanese journal of applied physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>1993</creationdate><title>Barrier heights of Schottky junctions on n-InP treated with phosphine plasma</title><author>SUGINO, T ; SAKAMOTO, Y ; SUMIGUCHI, T ; NOMOTO, K ; SHIRAFUJI, J</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c324t-18fde668b61e6c9c9e4da3eed7f8f966c84544eecfb81a333fac8877538bb6003</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1993</creationdate><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</topic><topic>Exact sciences and technology</topic><topic>Physics</topic><topic>Surface double layers, schottky barriers, and work functions</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>SUGINO, T</creatorcontrib><creatorcontrib>SAKAMOTO, Y</creatorcontrib><creatorcontrib>SUMIGUCHI, T</creatorcontrib><creatorcontrib>NOMOTO, K</creatorcontrib><creatorcontrib>SHIRAFUJI, J</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>SUGINO, T</au><au>SAKAMOTO, Y</au><au>SUMIGUCHI, T</au><au>NOMOTO, K</au><au>SHIRAFUJI, J</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Barrier heights of Schottky junctions on n-InP treated with phosphine plasma</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>1993</date><risdate>1993</risdate><volume>32</volume><issue>9A</issue><spage>L1196</spage><epage>L1199</epage><pages>L1196-L1199</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><coden>JJAPA5</coden><abstract>Surface treatment of n-InP by phosphine (PH
3
) plasma is carried out to modify the surface properties. It is observed from Kelvin probe measurements that the surface Fermi level shifts near the conduction band edge after PH
3
plasma treatment, while the surface Fermi level is located around 0.4 eV below the conduction band edge for a surface wet-etched before PH
3
plasma treatment. A funneling metal-insulator-semiconductor (MIS) Schottky structure is formed on PH
3
-plasma-treated InP to evaluate the treated surface. The Schottky barrier height evaluated from the Richardson plot is found to depend strongly on the metal work function. This suggests that the surface state density pinning the surface Fermi level is profoundly reduced due to PH
3
plasma treatment.</abstract><cop>Tokyo</cop><pub>Japanese journal of applied physics</pub><doi>10.1143/JJAP.32.L1196</doi></addata></record> |
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| ispartof | Japanese Journal of Applied Physics, 1993, Vol.32 (9A), p.L1196-L1199 |
| issn | 0021-4922 1347-4065 |
| language | eng |
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| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Exact sciences and technology Physics Surface double layers, schottky barriers, and work functions |
| title | Barrier heights of Schottky junctions on n-InP treated with phosphine plasma |
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