Photo- and electroluminescence from electrochemically polished silicon
Visible photoluminescence has been obtained from surface-etched silicon fabricated with high-current-density anodization on the order of 1000 mA/cm 2 (electrochemical polishing mode). Anodization at this current density makes silicon mirror-like with blue or yellow color. Photoluminescence intensity...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 1995, Vol.34 (10B), p.L1318-L1321 |
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| container_end_page | L1321 |
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| container_issue | 10B |
| container_start_page | L1318 |
| container_title | Japanese Journal of Applied Physics |
| container_volume | 34 |
| creator | MATSUMOTO, T MIMURA, H KANEMITSU, Y |
| description | Visible photoluminescence has been obtained from surface-etched silicon fabricated with high-current-density anodization on the order of 1000 mA/cm
2
(electrochemical polishing mode). Anodization at this current density makes silicon mirror-like with blue or yellow color. Photoluminescence intensity is almost equal to that of porous Si even for a thin layer on the order of a nanometer. Using such a layer, we have fabricated light-emitting diodes by indium tin oxide evaporation. Schottky-type junctions formed in this way have a large rectifying ratio on the order of 10
4
at ±15 V and show visible electroluminescence at a threshold bias voltage of less than 5 V. |
| doi_str_mv | 10.1143/jjap.34.l1318 |
| format | Article |
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2
(electrochemical polishing mode). Anodization at this current density makes silicon mirror-like with blue or yellow color. Photoluminescence intensity is almost equal to that of porous Si even for a thin layer on the order of a nanometer. Using such a layer, we have fabricated light-emitting diodes by indium tin oxide evaporation. Schottky-type junctions formed in this way have a large rectifying ratio on the order of 10
4
at ±15 V and show visible electroluminescence at a threshold bias voltage of less than 5 V.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.1143/jjap.34.l1318</identifier><identifier>CODEN: JJAPA5</identifier><language>eng</language><publisher>Tokyo: Japanese journal of applied physics</publisher><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Electroluminescence ; Exact sciences and technology ; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation ; Other luminescence and radiative recombination ; Other solid inorganic materials ; Photoluminescence ; Physics</subject><ispartof>Japanese Journal of Applied Physics, 1995, Vol.34 (10B), p.L1318-L1321</ispartof><rights>1995 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c333t-32ec14708645f9a1b8e45ab19bbc77f45fff611a7d825150c216402585bb28fa3</citedby><cites>FETCH-LOGICAL-c333t-32ec14708645f9a1b8e45ab19bbc77f45fff611a7d825150c216402585bb28fa3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,4021,27921,27922,27923</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=3705520$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>MATSUMOTO, T</creatorcontrib><creatorcontrib>MIMURA, H</creatorcontrib><creatorcontrib>KANEMITSU, Y</creatorcontrib><title>Photo- and electroluminescence from electrochemically polished silicon</title><title>Japanese Journal of Applied Physics</title><description>Visible photoluminescence has been obtained from surface-etched silicon fabricated with high-current-density anodization on the order of 1000 mA/cm
2
(electrochemical polishing mode). Anodization at this current density makes silicon mirror-like with blue or yellow color. Photoluminescence intensity is almost equal to that of porous Si even for a thin layer on the order of a nanometer. Using such a layer, we have fabricated light-emitting diodes by indium tin oxide evaporation. Schottky-type junctions formed in this way have a large rectifying ratio on the order of 10
4
at ±15 V and show visible electroluminescence at a threshold bias voltage of less than 5 V.</description><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Electroluminescence</subject><subject>Exact sciences and technology</subject><subject>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</subject><subject>Other luminescence and radiative recombination</subject><subject>Other solid inorganic materials</subject><subject>Photoluminescence</subject><subject>Physics</subject><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1995</creationdate><recordtype>article</recordtype><recordid>eNo9kL1PwzAQxS0EEqUwsmdAbC4-f-RjrCoKVJXoALPlOLbiyomDnQ7970nVwnS6u989vXsIPQJZAHD2st-rYcH4wgOD8grNgPECc5KLazQjhALmFaW36C6l_dTmgsMMrXdtGAPOVN9kxhs9xuAPnetN0qbXJrMxdH8L3ZrOaeX9MRuCd6k1TZacdzr09-jGKp_Mw6XO0ff69Wv1jrefbx-r5RZrxtiIGTUaeEHKnAtbKahLw4WqoaprXRR2GlqbA6iiKakAQTSFnBMqSlHXtLSKzdHzWXeI4edg0ig7Nzn1XvUmHJKkoiIVq_IJxGdQx5BSNFYO0XUqHiUQeUpLbjbLnWRcbk9pTfzTRVil6UUbVa9d-j9iBRGCEvYLSZ9qoA</recordid><startdate>1995</startdate><enddate>1995</enddate><creator>MATSUMOTO, T</creator><creator>MIMURA, H</creator><creator>KANEMITSU, Y</creator><general>Japanese journal of applied physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>1995</creationdate><title>Photo- and electroluminescence from electrochemically polished silicon</title><author>MATSUMOTO, T ; MIMURA, H ; KANEMITSU, Y</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c333t-32ec14708645f9a1b8e45ab19bbc77f45fff611a7d825150c216402585bb28fa3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1995</creationdate><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Electroluminescence</topic><topic>Exact sciences and technology</topic><topic>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</topic><topic>Other luminescence and radiative recombination</topic><topic>Other solid inorganic materials</topic><topic>Photoluminescence</topic><topic>Physics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>MATSUMOTO, T</creatorcontrib><creatorcontrib>MIMURA, H</creatorcontrib><creatorcontrib>KANEMITSU, Y</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>MATSUMOTO, T</au><au>MIMURA, H</au><au>KANEMITSU, Y</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Photo- and electroluminescence from electrochemically polished silicon</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>1995</date><risdate>1995</risdate><volume>34</volume><issue>10B</issue><spage>L1318</spage><epage>L1321</epage><pages>L1318-L1321</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><coden>JJAPA5</coden><abstract>Visible photoluminescence has been obtained from surface-etched silicon fabricated with high-current-density anodization on the order of 1000 mA/cm
2
(electrochemical polishing mode). Anodization at this current density makes silicon mirror-like with blue or yellow color. Photoluminescence intensity is almost equal to that of porous Si even for a thin layer on the order of a nanometer. Using such a layer, we have fabricated light-emitting diodes by indium tin oxide evaporation. Schottky-type junctions formed in this way have a large rectifying ratio on the order of 10
4
at ±15 V and show visible electroluminescence at a threshold bias voltage of less than 5 V.</abstract><cop>Tokyo</cop><pub>Japanese journal of applied physics</pub><doi>10.1143/jjap.34.l1318</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0021-4922 |
| ispartof | Japanese Journal of Applied Physics, 1995, Vol.34 (10B), p.L1318-L1321 |
| issn | 0021-4922 1347-4065 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_25909396 |
| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Electroluminescence Exact sciences and technology Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Other luminescence and radiative recombination Other solid inorganic materials Photoluminescence Physics |
| title | Photo- and electroluminescence from electrochemically polished silicon |
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