Thin film deposition of BaO by molecular beam epitaxy

Thin film deposition of BaO using BaO 2 as the source material is studied by molecular beam epitaxy. The crystalline nature of the films grown at different substrate temperatures is studied by RHEED. Chemical composition of the films has been ascertained from ESCA measurements carried out without br...

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Veröffentlicht in:Journal of crystal growth 1992-03, Vol.118 (1), p.213-217
Hauptverfasser: Muthe, K.P., Vyas, J.C., Kothiyal, G.P., Gandhi, D.P., Debnath, A.K., Gupta, S.K., Sabharwal, S.C., Gupta, M.K.
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container_end_page 217
container_issue 1
container_start_page 213
container_title Journal of crystal growth
container_volume 118
creator Muthe, K.P.
Vyas, J.C.
Kothiyal, G.P.
Gandhi, D.P.
Debnath, A.K.
Gupta, S.K.
Sabharwal, S.C.
Gupta, M.K.
description Thin film deposition of BaO using BaO 2 as the source material is studied by molecular beam epitaxy. The crystalline nature of the films grown at different substrate temperatures is studied by RHEED. Chemical composition of the films has been ascertained from ESCA measurements carried out without breaking the vacuum. The substrate temperature has been found to govern the composition of the films. Whilst at low growth temperature metallic Ba films are obtained, those grown at high temperatures (∼ 600°C) are of BaO.
doi_str_mv 10.1016/0022-0248(92)90066-R
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subjects Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Physics
Solid surfaces and solid-solid interfaces
Surface and interface dynamics and vibrations
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
title Thin film deposition of BaO by molecular beam epitaxy
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