Stress relaxation in AlCu thin films

The activation energy residual stress relaxation in Al2wt.%Cu thin films on silicon was determined to be 0.87 eV by measuring the stress as a function of time in the temperature range 373–523 K. This value is approximately that for grain boundary diffusion. The stress in the films at the relaxation...

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Veröffentlicht in:	Materials science & engineering. A, Structural materials : properties, microstructure and processing Structural materials : properties, microstructure and processing, 1992-01, Vol.149 (2), p.167-172
Hauptverfasser:	Shute, C.J., Cohen, J.B.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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