The effect of sulfuric acid on tunnel etching of aluminum in hydrochloric acid
Aluminum foil for high voltage aluminum electrolytic capacitor is etched by D. C. current in the hot chloric solution. The several studies of tunnel growth have ever studied using the hot hydrochloric acid. Effects of sulfuric acid in the hot hydrocloric acid on the tunnel etching of aluminum were s...
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| Veröffentlicht in: | Journal of Japan Institute of Light Metals 1992/08/30, Vol.42(8), pp.440-445 |
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| Format: | Artikel |
| Sprache: | eng ; jpn |
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| container_end_page | 445 |
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| container_issue | 8 |
| container_start_page | 440 |
| container_title | Journal of Japan Institute of Light Metals |
| container_volume | 42 |
| creator | HIBINO, Atsushi TAMAKI, Mitsuhiro WATANABE, Yoshiaki OKI, Takeo |
| description | Aluminum foil for high voltage aluminum electrolytic capacitor is etched by D. C. current in the hot chloric solution. The several studies of tunnel growth have ever studied using the hot hydrochloric acid. Effects of sulfuric acid in the hot hydrocloric acid on the tunnel etching of aluminum were studied. The concentration of sulfuric acid has no effect on the initial tunnel growth rate, but has definite effect on the limit of tunnel length. As increase in the concentration of sulfuric acid causes a decrease in the tunnel length. Initial etching pit sites scatter partially on the surface by adding sulfuric acid. The multiplication of etch tunnels occurs in sequence after previous tunnels have reached their limits of length. |
| doi_str_mv | 10.2464/jilm.42.440 |
| format | Article |
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C. current in the hot chloric solution. The several studies of tunnel growth have ever studied using the hot hydrochloric acid. Effects of sulfuric acid in the hot hydrocloric acid on the tunnel etching of aluminum were studied. The concentration of sulfuric acid has no effect on the initial tunnel growth rate, but has definite effect on the limit of tunnel length. As increase in the concentration of sulfuric acid causes a decrease in the tunnel length. Initial etching pit sites scatter partially on the surface by adding sulfuric acid. The multiplication of etch tunnels occurs in sequence after previous tunnels have reached their limits of length.</description><identifier>ISSN: 0451-5994</identifier><identifier>EISSN: 1880-8018</identifier><identifier>DOI: 10.2464/jilm.42.440</identifier><identifier>CODEN: KEIKA6</identifier><language>eng ; jpn</language><publisher>Tokyo: The Japan Institute of Light Metals</publisher><subject>aluminum ; electrolytic capacitor ; etch pit ; sulfuric acid ; tunnel etching</subject><ispartof>Journal of Japan Institute of Light Metals, 1992/08/30, Vol.42(8), pp.440-445</ispartof><rights>The Japan Institute of Light Metals</rights><rights>1993 INIST-CNRS</rights><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c3610-f6e0351b631743512ec43ef8ec516c9b0c877145e3b297084f9e6155878579013</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,1877,4010,27900,27901,27902</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=4314453$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>HIBINO, Atsushi</creatorcontrib><creatorcontrib>TAMAKI, Mitsuhiro</creatorcontrib><creatorcontrib>WATANABE, Yoshiaki</creatorcontrib><creatorcontrib>OKI, Takeo</creatorcontrib><title>The effect of sulfuric acid on tunnel etching of aluminum in hydrochloric acid</title><title>Journal of Japan Institute of Light Metals</title><addtitle>J. Japan Inst. Light Metals</addtitle><description>Aluminum foil for high voltage aluminum electrolytic capacitor is etched by D. C. current in the hot chloric solution. The several studies of tunnel growth have ever studied using the hot hydrochloric acid. Effects of sulfuric acid in the hot hydrocloric acid on the tunnel etching of aluminum were studied. The concentration of sulfuric acid has no effect on the initial tunnel growth rate, but has definite effect on the limit of tunnel length. As increase in the concentration of sulfuric acid causes a decrease in the tunnel length. Initial etching pit sites scatter partially on the surface by adding sulfuric acid. The multiplication of etch tunnels occurs in sequence after previous tunnels have reached their limits of length.</description><subject>aluminum</subject><subject>electrolytic capacitor</subject><subject>etch pit</subject><subject>sulfuric acid</subject><subject>tunnel etching</subject><issn>0451-5994</issn><issn>1880-8018</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1992</creationdate><recordtype>article</recordtype><recordid>eNo9kD1PwzAQhi0EEhV04g94QCwoxY7PiTOi8ikhWMpsueZMjBwH7GTovyelpcvdSe9zz_AScsHZooQKbr586BZQLgDYEZlxpVihGFfHZMZA8kI2DZySec5-zUoGddlIPiOvqxYpOod2oL2jeQxuTN5SY_0H7SMdxhgxUBxs6-PnFjFh7HwcO-ojbTcfqbdt6P9fzsmJMyHjfL_PyPvD_Wr5VLy8PT4vb18KKyrOClchE5KvK8FrmI4SLQh0Cq3klW3WzKq65iBRrMumZgpcgxWXUtVK1g3j4oxc7bzfqf8ZMQ-689liCCZiP2ZdStWoSooJvN6BNvU5J3T6O_nOpI3mTG9r09vaNJR6qm2iL_dak60JLplofT68gOAAf9K7HfaVB_OJh9ykwduAf0o-1bvVqv0Adohta5LGKH4BG9-Dxw</recordid><startdate>1992</startdate><enddate>1992</enddate><creator>HIBINO, Atsushi</creator><creator>TAMAKI, Mitsuhiro</creator><creator>WATANABE, Yoshiaki</creator><creator>OKI, Takeo</creator><general>The Japan Institute of Light Metals</general><general>Keikinzoku Gakkai, c/o Hibiya Asahi Seimeikan, Keikinzoku Kyokai</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QF</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>1992</creationdate><title>The effect of sulfuric acid on tunnel etching of aluminum in hydrochloric acid</title><author>HIBINO, Atsushi ; TAMAKI, Mitsuhiro ; WATANABE, Yoshiaki ; OKI, Takeo</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c3610-f6e0351b631743512ec43ef8ec516c9b0c877145e3b297084f9e6155878579013</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng ; jpn</language><creationdate>1992</creationdate><topic>aluminum</topic><topic>electrolytic capacitor</topic><topic>etch pit</topic><topic>sulfuric acid</topic><topic>tunnel etching</topic><toplevel>online_resources</toplevel><creatorcontrib>HIBINO, Atsushi</creatorcontrib><creatorcontrib>TAMAKI, Mitsuhiro</creatorcontrib><creatorcontrib>WATANABE, Yoshiaki</creatorcontrib><creatorcontrib>OKI, Takeo</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Aluminium Industry Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Journal of Japan Institute of Light Metals</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>HIBINO, Atsushi</au><au>TAMAKI, Mitsuhiro</au><au>WATANABE, Yoshiaki</au><au>OKI, Takeo</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>The effect of sulfuric acid on tunnel etching of aluminum in hydrochloric acid</atitle><jtitle>Journal of Japan Institute of Light Metals</jtitle><addtitle>J. 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The multiplication of etch tunnels occurs in sequence after previous tunnels have reached their limits of length.</abstract><cop>Tokyo</cop><pub>The Japan Institute of Light Metals</pub><doi>10.2464/jilm.42.440</doi><tpages>6</tpages><oa>free_for_read</oa></addata></record> |
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| ispartof | Journal of Japan Institute of Light Metals, 1992/08/30, Vol.42(8), pp.440-445 |
| issn | 0451-5994 1880-8018 |
| language | eng ; jpn |
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| source | J-STAGE Free; EZB-FREE-00999 freely available EZB journals |
| subjects | aluminum electrolytic capacitor etch pit sulfuric acid tunnel etching |
| title | The effect of sulfuric acid on tunnel etching of aluminum in hydrochloric acid |
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