The effect of deposition temperature on the properties of Al-doped zinc oxide thin films
Transparent and conductive aluminum-doped zinc oxide films have been prepared by RF reactive magnetron sputtering with different substrate temperatures. The structural characteristics of the films were investigated by the X-ray diffractometry, scanning electron microscopy, atomic force microscopy an...
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Veröffentlicht in: | Thin solid films 2001-05, Vol.386 (1), p.79-86 |
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description | Transparent and conductive aluminum-doped zinc oxide films have been prepared by RF reactive magnetron sputtering with different substrate temperatures. The structural characteristics of the films were investigated by the X-ray diffractometry, scanning electron microscopy, atomic force microscopy and transmission electron microscopy, while the electric and optical properties of the films were studied by the Hall measurement and optical spectroscopy, respectively. It has been found that all of the films deposited were flat and smooth with a
c-axis preferred orientation perpendicular to the substrate. The lowest resistivity obtained in this study was 4.16×10
−4 Ω cm for the films deposited at the substrate temperature of 250°C. By calculating the mean free path of electrons, ion impurity scattering is considered to be the dominant factor for the decrease of conductivity. Optical transmittance measurement results show a good transparency within the visible wavelength range for the films deposited at substrate temperatures above 200°C. |
doi_str_mv | 10.1016/S0040-6090(00)01891-5 |
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c-axis preferred orientation perpendicular to the substrate. The lowest resistivity obtained in this study was 4.16×10
−4 Ω cm for the films deposited at the substrate temperature of 250°C. By calculating the mean free path of electrons, ion impurity scattering is considered to be the dominant factor for the decrease of conductivity. Optical transmittance measurement results show a good transparency within the visible wavelength range for the films deposited at substrate temperatures above 200°C.</description><identifier>ISSN: 0040-6090</identifier><identifier>EISSN: 1879-2731</identifier><identifier>DOI: 10.1016/S0040-6090(00)01891-5</identifier><identifier>CODEN: THSFAP</identifier><language>eng</language><publisher>Lausanne: Elsevier B.V</publisher><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Cross-disciplinary physics: materials science; rheology ; Deposition by sputtering ; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures ; Electronic transport phenomena in thin films and low-dimensional structures ; Exact sciences and technology ; Low-field transport and mobility; piezoresistance ; Materials science ; Methods of deposition of films and coatings; film growth and epitaxy ; Optical coatings ; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation ; Other nonmetallic inorganics ; Other nonmetals ; Physics ; Sputtering ; Structural properties ; Visible and ultraviolet spectra</subject><ispartof>Thin solid films, 2001-05, Vol.386 (1), p.79-86</ispartof><rights>2001 Elsevier Science B.V.</rights><rights>2001 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c432t-46232e5917e604dd698b2414ad3c02334fb3566d1bb13d18b87058e83044039e3</citedby><cites>FETCH-LOGICAL-c432t-46232e5917e604dd698b2414ad3c02334fb3566d1bb13d18b87058e83044039e3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/S0040-6090(00)01891-5$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3548,27922,27923,45993</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=927025$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Chang, J.F.</creatorcontrib><creatorcontrib>Hon, M.H.</creatorcontrib><title>The effect of deposition temperature on the properties of Al-doped zinc oxide thin films</title><title>Thin solid films</title><description>Transparent and conductive aluminum-doped zinc oxide films have been prepared by RF reactive magnetron sputtering with different substrate temperatures. The structural characteristics of the films were investigated by the X-ray diffractometry, scanning electron microscopy, atomic force microscopy and transmission electron microscopy, while the electric and optical properties of the films were studied by the Hall measurement and optical spectroscopy, respectively. It has been found that all of the films deposited were flat and smooth with a
c-axis preferred orientation perpendicular to the substrate. The lowest resistivity obtained in this study was 4.16×10
−4 Ω cm for the films deposited at the substrate temperature of 250°C. By calculating the mean free path of electrons, ion impurity scattering is considered to be the dominant factor for the decrease of conductivity. Optical transmittance measurement results show a good transparency within the visible wavelength range for the films deposited at substrate temperatures above 200°C.</description><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Deposition by sputtering</subject><subject>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</subject><subject>Electronic transport phenomena in thin films and low-dimensional structures</subject><subject>Exact sciences and technology</subject><subject>Low-field transport and mobility; piezoresistance</subject><subject>Materials science</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>Optical coatings</subject><subject>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</subject><subject>Other nonmetallic inorganics</subject><subject>Other nonmetals</subject><subject>Physics</subject><subject>Sputtering</subject><subject>Structural properties</subject><subject>Visible and ultraviolet spectra</subject><issn>0040-6090</issn><issn>1879-2731</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2001</creationdate><recordtype>article</recordtype><recordid>eNqFkE1LxDAQhoMouK7-BKEgiB6qk4-26UmWxS9Y8OAK3kKbTDHSNmvSFfXXm7rLXoVAmPDMO5OHkFMKVxRofv0MICDNoYQLgEugsqRptkcmVBZlygpO98lkhxySoxDeAYAyxifkdfmGCTYN6iFxTWJw5YIdrOuTAbsV-mpYe0zGMnIr7-LTYDGM7KxNTaxN8mN7nbgvazBStk8a23bhmBw0VRvwZHtPycvd7XL-kC6e7h_ns0WqBWdDKnLGGWYlLTAHYUxeypoJKirDNTDORVPzLM8NrWvKDZW1LCCTKDkIAbxEPiXnm9y43Mcaw6A6GzS2bdWjWwfFMlkWY9KUZBtQexeCx0atvO0q_60oqNGj-vOoRkkK4hk9qiz2nW0HVEFXbeOrXtuway5ZTB-pmw2F8a-fFr0K2mKv0Vgf3Srj7D9zfgF4M4VN</recordid><startdate>20010501</startdate><enddate>20010501</enddate><creator>Chang, J.F.</creator><creator>Hon, M.H.</creator><general>Elsevier B.V</general><general>Elsevier Science</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20010501</creationdate><title>The effect of deposition temperature on the properties of Al-doped zinc oxide thin films</title><author>Chang, J.F. ; Hon, M.H.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c432t-46232e5917e604dd698b2414ad3c02334fb3566d1bb13d18b87058e83044039e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2001</creationdate><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Deposition by sputtering</topic><topic>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</topic><topic>Electronic transport phenomena in thin films and low-dimensional structures</topic><topic>Exact sciences and technology</topic><topic>Low-field transport and mobility; piezoresistance</topic><topic>Materials science</topic><topic>Methods of deposition of films and coatings; film growth and epitaxy</topic><topic>Optical coatings</topic><topic>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</topic><topic>Other nonmetallic inorganics</topic><topic>Other nonmetals</topic><topic>Physics</topic><topic>Sputtering</topic><topic>Structural properties</topic><topic>Visible and ultraviolet spectra</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Chang, J.F.</creatorcontrib><creatorcontrib>Hon, M.H.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Thin solid films</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Chang, J.F.</au><au>Hon, M.H.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>The effect of deposition temperature on the properties of Al-doped zinc oxide thin films</atitle><jtitle>Thin solid films</jtitle><date>2001-05-01</date><risdate>2001</risdate><volume>386</volume><issue>1</issue><spage>79</spage><epage>86</epage><pages>79-86</pages><issn>0040-6090</issn><eissn>1879-2731</eissn><coden>THSFAP</coden><abstract>Transparent and conductive aluminum-doped zinc oxide films have been prepared by RF reactive magnetron sputtering with different substrate temperatures. The structural characteristics of the films were investigated by the X-ray diffractometry, scanning electron microscopy, atomic force microscopy and transmission electron microscopy, while the electric and optical properties of the films were studied by the Hall measurement and optical spectroscopy, respectively. It has been found that all of the films deposited were flat and smooth with a
c-axis preferred orientation perpendicular to the substrate. The lowest resistivity obtained in this study was 4.16×10
−4 Ω cm for the films deposited at the substrate temperature of 250°C. By calculating the mean free path of electrons, ion impurity scattering is considered to be the dominant factor for the decrease of conductivity. Optical transmittance measurement results show a good transparency within the visible wavelength range for the films deposited at substrate temperatures above 200°C.</abstract><cop>Lausanne</cop><pub>Elsevier B.V</pub><doi>10.1016/S0040-6090(00)01891-5</doi><tpages>8</tpages></addata></record> |
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source | ScienceDirect Journals (5 years ago - present) |
subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science rheology Deposition by sputtering Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport phenomena in thin films and low-dimensional structures Exact sciences and technology Low-field transport and mobility piezoresistance Materials science Methods of deposition of films and coatings film growth and epitaxy Optical coatings Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Other nonmetallic inorganics Other nonmetals Physics Sputtering Structural properties Visible and ultraviolet spectra |
title | The effect of deposition temperature on the properties of Al-doped zinc oxide thin films |
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