The effect of deposition temperature on the properties of Al-doped zinc oxide thin films

Transparent and conductive aluminum-doped zinc oxide films have been prepared by RF reactive magnetron sputtering with different substrate temperatures. The structural characteristics of the films were investigated by the X-ray diffractometry, scanning electron microscopy, atomic force microscopy an...

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Veröffentlicht in:Thin solid films 2001-05, Vol.386 (1), p.79-86
Hauptverfasser: Chang, J.F., Hon, M.H.
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Hon, M.H.
description Transparent and conductive aluminum-doped zinc oxide films have been prepared by RF reactive magnetron sputtering with different substrate temperatures. The structural characteristics of the films were investigated by the X-ray diffractometry, scanning electron microscopy, atomic force microscopy and transmission electron microscopy, while the electric and optical properties of the films were studied by the Hall measurement and optical spectroscopy, respectively. It has been found that all of the films deposited were flat and smooth with a c-axis preferred orientation perpendicular to the substrate. The lowest resistivity obtained in this study was 4.16×10 −4 Ω cm for the films deposited at the substrate temperature of 250°C. By calculating the mean free path of electrons, ion impurity scattering is considered to be the dominant factor for the decrease of conductivity. Optical transmittance measurement results show a good transparency within the visible wavelength range for the films deposited at substrate temperatures above 200°C.
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fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_25897023</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0040609000018915</els_id><sourcerecordid>25897023</sourcerecordid><originalsourceid>FETCH-LOGICAL-c432t-46232e5917e604dd698b2414ad3c02334fb3566d1bb13d18b87058e83044039e3</originalsourceid><addsrcrecordid>eNqFkE1LxDAQhoMouK7-BKEgiB6qk4-26UmWxS9Y8OAK3kKbTDHSNmvSFfXXm7rLXoVAmPDMO5OHkFMKVxRofv0MICDNoYQLgEugsqRptkcmVBZlygpO98lkhxySoxDeAYAyxifkdfmGCTYN6iFxTWJw5YIdrOuTAbsV-mpYe0zGMnIr7-LTYDGM7KxNTaxN8mN7nbgvazBStk8a23bhmBw0VRvwZHtPycvd7XL-kC6e7h_ns0WqBWdDKnLGGWYlLTAHYUxeypoJKirDNTDORVPzLM8NrWvKDZW1LCCTKDkIAbxEPiXnm9y43Mcaw6A6GzS2bdWjWwfFMlkWY9KUZBtQexeCx0atvO0q_60oqNGj-vOoRkkK4hk9qiz2nW0HVEFXbeOrXtuway5ZTB-pmw2F8a-fFr0K2mKv0Vgf3Srj7D9zfgF4M4VN</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>25897023</pqid></control><display><type>article</type><title>The effect of deposition temperature on the properties of Al-doped zinc oxide thin films</title><source>ScienceDirect Journals (5 years ago - present)</source><creator>Chang, J.F. ; Hon, M.H.</creator><creatorcontrib>Chang, J.F. ; Hon, M.H.</creatorcontrib><description>Transparent and conductive aluminum-doped zinc oxide films have been prepared by RF reactive magnetron sputtering with different substrate temperatures. The structural characteristics of the films were investigated by the X-ray diffractometry, scanning electron microscopy, atomic force microscopy and transmission electron microscopy, while the electric and optical properties of the films were studied by the Hall measurement and optical spectroscopy, respectively. It has been found that all of the films deposited were flat and smooth with a c-axis preferred orientation perpendicular to the substrate. The lowest resistivity obtained in this study was 4.16×10 −4 Ω cm for the films deposited at the substrate temperature of 250°C. By calculating the mean free path of electrons, ion impurity scattering is considered to be the dominant factor for the decrease of conductivity. Optical transmittance measurement results show a good transparency within the visible wavelength range for the films deposited at substrate temperatures above 200°C.</description><identifier>ISSN: 0040-6090</identifier><identifier>EISSN: 1879-2731</identifier><identifier>DOI: 10.1016/S0040-6090(00)01891-5</identifier><identifier>CODEN: THSFAP</identifier><language>eng</language><publisher>Lausanne: Elsevier B.V</publisher><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Cross-disciplinary physics: materials science; rheology ; Deposition by sputtering ; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures ; Electronic transport phenomena in thin films and low-dimensional structures ; Exact sciences and technology ; Low-field transport and mobility; piezoresistance ; Materials science ; Methods of deposition of films and coatings; film growth and epitaxy ; Optical coatings ; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation ; Other nonmetallic inorganics ; Other nonmetals ; Physics ; Sputtering ; Structural properties ; Visible and ultraviolet spectra</subject><ispartof>Thin solid films, 2001-05, Vol.386 (1), p.79-86</ispartof><rights>2001 Elsevier Science B.V.</rights><rights>2001 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c432t-46232e5917e604dd698b2414ad3c02334fb3566d1bb13d18b87058e83044039e3</citedby><cites>FETCH-LOGICAL-c432t-46232e5917e604dd698b2414ad3c02334fb3566d1bb13d18b87058e83044039e3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/S0040-6090(00)01891-5$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3548,27922,27923,45993</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&amp;idt=927025$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Chang, J.F.</creatorcontrib><creatorcontrib>Hon, M.H.</creatorcontrib><title>The effect of deposition temperature on the properties of Al-doped zinc oxide thin films</title><title>Thin solid films</title><description>Transparent and conductive aluminum-doped zinc oxide films have been prepared by RF reactive magnetron sputtering with different substrate temperatures. The structural characteristics of the films were investigated by the X-ray diffractometry, scanning electron microscopy, atomic force microscopy and transmission electron microscopy, while the electric and optical properties of the films were studied by the Hall measurement and optical spectroscopy, respectively. It has been found that all of the films deposited were flat and smooth with a c-axis preferred orientation perpendicular to the substrate. The lowest resistivity obtained in this study was 4.16×10 −4 Ω cm for the films deposited at the substrate temperature of 250°C. By calculating the mean free path of electrons, ion impurity scattering is considered to be the dominant factor for the decrease of conductivity. Optical transmittance measurement results show a good transparency within the visible wavelength range for the films deposited at substrate temperatures above 200°C.</description><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Deposition by sputtering</subject><subject>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</subject><subject>Electronic transport phenomena in thin films and low-dimensional structures</subject><subject>Exact sciences and technology</subject><subject>Low-field transport and mobility; piezoresistance</subject><subject>Materials science</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>Optical coatings</subject><subject>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</subject><subject>Other nonmetallic inorganics</subject><subject>Other nonmetals</subject><subject>Physics</subject><subject>Sputtering</subject><subject>Structural properties</subject><subject>Visible and ultraviolet spectra</subject><issn>0040-6090</issn><issn>1879-2731</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2001</creationdate><recordtype>article</recordtype><recordid>eNqFkE1LxDAQhoMouK7-BKEgiB6qk4-26UmWxS9Y8OAK3kKbTDHSNmvSFfXXm7rLXoVAmPDMO5OHkFMKVxRofv0MICDNoYQLgEugsqRptkcmVBZlygpO98lkhxySoxDeAYAyxifkdfmGCTYN6iFxTWJw5YIdrOuTAbsV-mpYe0zGMnIr7-LTYDGM7KxNTaxN8mN7nbgvazBStk8a23bhmBw0VRvwZHtPycvd7XL-kC6e7h_ns0WqBWdDKnLGGWYlLTAHYUxeypoJKirDNTDORVPzLM8NrWvKDZW1LCCTKDkIAbxEPiXnm9y43Mcaw6A6GzS2bdWjWwfFMlkWY9KUZBtQexeCx0atvO0q_60oqNGj-vOoRkkK4hk9qiz2nW0HVEFXbeOrXtuway5ZTB-pmw2F8a-fFr0K2mKv0Vgf3Srj7D9zfgF4M4VN</recordid><startdate>20010501</startdate><enddate>20010501</enddate><creator>Chang, J.F.</creator><creator>Hon, M.H.</creator><general>Elsevier B.V</general><general>Elsevier Science</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20010501</creationdate><title>The effect of deposition temperature on the properties of Al-doped zinc oxide thin films</title><author>Chang, J.F. ; Hon, M.H.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c432t-46232e5917e604dd698b2414ad3c02334fb3566d1bb13d18b87058e83044039e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2001</creationdate><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Deposition by sputtering</topic><topic>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</topic><topic>Electronic transport phenomena in thin films and low-dimensional structures</topic><topic>Exact sciences and technology</topic><topic>Low-field transport and mobility; piezoresistance</topic><topic>Materials science</topic><topic>Methods of deposition of films and coatings; film growth and epitaxy</topic><topic>Optical coatings</topic><topic>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</topic><topic>Other nonmetallic inorganics</topic><topic>Other nonmetals</topic><topic>Physics</topic><topic>Sputtering</topic><topic>Structural properties</topic><topic>Visible and ultraviolet spectra</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Chang, J.F.</creatorcontrib><creatorcontrib>Hon, M.H.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics &amp; Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Thin solid films</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Chang, J.F.</au><au>Hon, M.H.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>The effect of deposition temperature on the properties of Al-doped zinc oxide thin films</atitle><jtitle>Thin solid films</jtitle><date>2001-05-01</date><risdate>2001</risdate><volume>386</volume><issue>1</issue><spage>79</spage><epage>86</epage><pages>79-86</pages><issn>0040-6090</issn><eissn>1879-2731</eissn><coden>THSFAP</coden><abstract>Transparent and conductive aluminum-doped zinc oxide films have been prepared by RF reactive magnetron sputtering with different substrate temperatures. The structural characteristics of the films were investigated by the X-ray diffractometry, scanning electron microscopy, atomic force microscopy and transmission electron microscopy, while the electric and optical properties of the films were studied by the Hall measurement and optical spectroscopy, respectively. It has been found that all of the films deposited were flat and smooth with a c-axis preferred orientation perpendicular to the substrate. The lowest resistivity obtained in this study was 4.16×10 −4 Ω cm for the films deposited at the substrate temperature of 250°C. By calculating the mean free path of electrons, ion impurity scattering is considered to be the dominant factor for the decrease of conductivity. Optical transmittance measurement results show a good transparency within the visible wavelength range for the films deposited at substrate temperatures above 200°C.</abstract><cop>Lausanne</cop><pub>Elsevier B.V</pub><doi>10.1016/S0040-6090(00)01891-5</doi><tpages>8</tpages></addata></record>
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subjects Condensed matter: electronic structure, electrical, magnetic, and optical properties
Cross-disciplinary physics: materials science
rheology
Deposition by sputtering
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Electronic transport phenomena in thin films and low-dimensional structures
Exact sciences and technology
Low-field transport and mobility
piezoresistance
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Optical coatings
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Other nonmetallic inorganics
Other nonmetals
Physics
Sputtering
Structural properties
Visible and ultraviolet spectra
title The effect of deposition temperature on the properties of Al-doped zinc oxide thin films
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-13T19%3A36%3A19IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=The%20effect%20of%20deposition%20temperature%20on%20the%20properties%20of%20Al-doped%20zinc%20oxide%20thin%20films&rft.jtitle=Thin%20solid%20films&rft.au=Chang,%20J.F.&rft.date=2001-05-01&rft.volume=386&rft.issue=1&rft.spage=79&rft.epage=86&rft.pages=79-86&rft.issn=0040-6090&rft.eissn=1879-2731&rft.coden=THSFAP&rft_id=info:doi/10.1016/S0040-6090(00)01891-5&rft_dat=%3Cproquest_cross%3E25897023%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=25897023&rft_id=info:pmid/&rft_els_id=S0040609000018915&rfr_iscdi=true