Single-crystalline, epitaxial cubic SiC films grown on (100) Si at 750°C by chemical vapor deposition

Single-crystalline, epitaxial cubic SiC films grown on (100) Si at 750°C by chemical vapor deposition

Single-crystalline, epitaxial cubic (100) SiC films have been grown on (100) Si substrates at 750 °C by low-pressure chemical vapor deposition, using methylsilane, SiCH3H3, a single precursor with a Si:C ratio of 1:1, and H2. This epitaxial growth temperature is the lowest reported to date. The film...

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Veröffentlicht in:Applied physics letters 1992-04, Vol.60 (14), p.1703-1705
Hauptverfasser: GOLECKI, I, REIDINGER, F, MARTI, J
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Sprache:eng
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Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Physics
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container_issue 14
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container_title Applied physics letters
container_volume 60
creator GOLECKI, I
REIDINGER, F
MARTI, J
description Single-crystalline, epitaxial cubic (100) SiC films have been grown on (100) Si substrates at 750 °C by low-pressure chemical vapor deposition, using methylsilane, SiCH3H3, a single precursor with a Si:C ratio of 1:1, and H2. This epitaxial growth temperature is the lowest reported to date. The films were characterized by means of transmission electron microscopy, x-ray diffraction, infrared transmission, four-point probe and other methods. Based on double-crystal x-ray diffractometry, the crystalline quality of our films is equivalent to that of commercial films of similar thickness. The letter describes the novel growth apparatus used and the properties of the films.
doi_str_mv 10.1063/1.107191
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subjects Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Physics
title Single-crystalline, epitaxial cubic SiC films grown on (100) Si at 750°C by chemical vapor deposition
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