Schottky-barrier formation in conducting polymers

Thin films of poly(3-hexylthiophene) and polypyrrole on highly oriented pyrolytic graphite have been studied with scanning tunneling microscopy. We observed semicrystalline order in the form of micro-islands and parallel strands of polymer. The orientation of these strands is determined by the subst...

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Veröffentlicht in:Ultramicroscopy 1992, Vol.42 (B), p.1004-1008
Hauptverfasser: Hoogenraad, F.G.C., Hogervorst, A.C.R., Scholte, P.M.L.O., Tuinstra, F.
Format: Artikel
Sprache:eng
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Zusammenfassung:Thin films of poly(3-hexylthiophene) and polypyrrole on highly oriented pyrolytic graphite have been studied with scanning tunneling microscopy. We observed semicrystalline order in the form of micro-islands and parallel strands of polymer. The orientation of these strands is determined by the substrate. Also, a new and until now unreported effect has been observed. The corrugation measured perpendicular to the strands in constant-current mode is different for positive and negative bias voltages. This difference can be attributed to the formation of a Schottky barrier between the metallic tip and the semiconducting polymer.
ISSN:0304-3991
1879-2723
DOI:10.1016/0304-3991(92)90393-X