Resonant tunneling through the bound states of a single donor atom in a quantum well
A series of sharp peaks is observed in the low-temperature I(V) characteristics of a gated 1 x 1-micron GaAs/(AlGa)As resonant tunneling diode, in which the gate is used to reduce the effective cross-sectional area from 0.7 to less than 0.1 sq micron. These peaks, which occur at voltages well below...
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Veröffentlicht in: | Physical review letters 1992-03, Vol.68 (11), p.1754-1757 |
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creator | DELLOW, M. W BETON, P. H LANGERAK, C. J. G. M FOSTER, T. J MAIN, P. C EAVES, L HENINI, M BEAUMONT, S. P WILKINSON, C. D. W |
description | A series of sharp peaks is observed in the low-temperature I(V) characteristics of a gated 1 x 1-micron GaAs/(AlGa)As resonant tunneling diode, in which the gate is used to reduce the effective cross-sectional area from 0.7 to less than 0.1 sq micron. These peaks, which occur at voltages well below the calculated resonant threshold, show a weak dependence on temperature, magnetic field, and cross-sectional area. This subthreshold structure is argued to be due to an inhomogeneity which gives rise to a localized preferential current path, and the spatial extent of the inhomogeneity is approximately 25 nm. The likely origin of the inhomogeneity is a donor impurity in the quantum well. (Author) |
doi_str_mv | 10.1103/physrevlett.68.1754 |
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W ; BETON, P. H ; LANGERAK, C. J. G. M ; FOSTER, T. J ; MAIN, P. C ; EAVES, L ; HENINI, M ; BEAUMONT, S. P ; WILKINSON, C. D. W</creator><creatorcontrib>DELLOW, M. W ; BETON, P. H ; LANGERAK, C. J. G. M ; FOSTER, T. J ; MAIN, P. C ; EAVES, L ; HENINI, M ; BEAUMONT, S. P ; WILKINSON, C. D. W</creatorcontrib><description>A series of sharp peaks is observed in the low-temperature I(V) characteristics of a gated 1 x 1-micron GaAs/(AlGa)As resonant tunneling diode, in which the gate is used to reduce the effective cross-sectional area from 0.7 to less than 0.1 sq micron. These peaks, which occur at voltages well below the calculated resonant threshold, show a weak dependence on temperature, magnetic field, and cross-sectional area. This subthreshold structure is argued to be due to an inhomogeneity which gives rise to a localized preferential current path, and the spatial extent of the inhomogeneity is approximately 25 nm. The likely origin of the inhomogeneity is a donor impurity in the quantum well. 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W</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Resonant tunneling through the bound states of a single donor atom in a quantum well</atitle><jtitle>Physical review letters</jtitle><addtitle>Phys Rev Lett</addtitle><date>1992-03-16</date><risdate>1992</risdate><volume>68</volume><issue>11</issue><spage>1754</spage><epage>1757</epage><pages>1754-1757</pages><issn>0031-9007</issn><eissn>1079-7114</eissn><coden>PRLTAO</coden><abstract>A series of sharp peaks is observed in the low-temperature I(V) characteristics of a gated 1 x 1-micron GaAs/(AlGa)As resonant tunneling diode, in which the gate is used to reduce the effective cross-sectional area from 0.7 to less than 0.1 sq micron. These peaks, which occur at voltages well below the calculated resonant threshold, show a weak dependence on temperature, magnetic field, and cross-sectional area. This subthreshold structure is argued to be due to an inhomogeneity which gives rise to a localized preferential current path, and the spatial extent of the inhomogeneity is approximately 25 nm. The likely origin of the inhomogeneity is a donor impurity in the quantum well. (Author)</abstract><cop>Ridge, NY</cop><pub>American Physical Society</pub><pmid>10045212</pmid><doi>10.1103/physrevlett.68.1754</doi><tpages>4</tpages></addata></record> |
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subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport in interface structures Exact sciences and technology Physics |
title | Resonant tunneling through the bound states of a single donor atom in a quantum well |
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