A quantitative model for the coupled diffusion of phosphorus and point defects in silicon

In this paper, we develop and analyze models for the coupled diffusion of dopants and point defects, since such models have been observed to display the qualitative aspects of high concentration phosphorus diffusion profiles such as the characteristic 'kink and tail.' We begin by describin...

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Veröffentlicht in:	Journal of the Electrochemical Society 1992-09, Vol.139 (9), p.2628-2636
1. Verfasser:	DUNHAM, S. T
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Diffusion in solids Diffusion of impurities Exact sciences and technology Physics Transport properties of condensed matter (nonelectronic)
Online-Zugang:	Volltext
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