Planar AlGaAs/GaAs HBT fabricated by MOCVD overgrowth with a grown base

A planar heterojunction bipolar transistor (HBT) with an AlGaAs emitter layer epitaxially grown onto a selectively defined grown base layer, where the base is grown with the collector as part of the original epi, is discussed. The transistors fabricated with this process exhibit good gain and output...

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Veröffentlicht in:	IEEE transactions on electron devices 1990-05, Vol.37 (5), p.1187-1192
Hauptverfasser:	Plumton, D.L., Yang, J.-Y., Morris, F.J., Lambert, S.A.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Doping Electronics Exact sciences and technology Gallium arsenide Heterojunction bipolar transistors Large scale integration Manufacturing processes MOCVD Process design Propagation delay Ring oscillators Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors Voltage-controlled oscillators
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