Planar AlGaAs/GaAs HBT fabricated by MOCVD overgrowth with a grown base
A planar heterojunction bipolar transistor (HBT) with an AlGaAs emitter layer epitaxially grown onto a selectively defined grown base layer, where the base is grown with the collector as part of the original epi, is discussed. The transistors fabricated with this process exhibit good gain and output...
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| Veröffentlicht in: | IEEE transactions on electron devices 1990-05, Vol.37 (5), p.1187-1192 |
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| container_end_page | 1192 |
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| container_issue | 5 |
| container_start_page | 1187 |
| container_title | IEEE transactions on electron devices |
| container_volume | 37 |
| creator | Plumton, D.L. Yang, J.-Y. Morris, F.J. Lambert, S.A. |
| description | A planar heterojunction bipolar transistor (HBT) with an AlGaAs emitter layer epitaxially grown onto a selectively defined grown base layer, where the base is grown with the collector as part of the original epi, is discussed. The transistors fabricated with this process exhibit good gain and output characteristics. Transistors with 7*7 mu m/sup 2/ emitters have exhibited a DC current gain of 10 to 1000 for base doping from 1*10/sup 19/ to 8*10/sup 17/ cm/sup 3/, respectively, and Early voltages >or=100 V. The propagation delay of 19-stage ring oscillators was 87 ps/gate. The transistor-fabrication process was designed to be manufacturable, and the planar nature of the transistor surface should permit large-scale integration with good yields.< > |
| doi_str_mv | 10.1109/16.108178 |
| format | Article |
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The transistors fabricated with this process exhibit good gain and output characteristics. Transistors with 7*7 mu m/sup 2/ emitters have exhibited a DC current gain of 10 to 1000 for base doping from 1*10/sup 19/ to 8*10/sup 17/ cm/sup 3/, respectively, and Early voltages >or=100 V. The propagation delay of 19-stage ring oscillators was 87 ps/gate. The transistor-fabrication process was designed to be manufacturable, and the planar nature of the transistor surface should permit large-scale integration with good yields.< ></description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/16.108178</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Doping ; Electronics ; Exact sciences and technology ; Gallium arsenide ; Heterojunction bipolar transistors ; Large scale integration ; Manufacturing processes ; MOCVD ; Process design ; Propagation delay ; Ring oscillators ; Semiconductor electronics. Microelectronics. Optoelectronics. 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The transistors fabricated with this process exhibit good gain and output characteristics. Transistors with 7*7 mu m/sup 2/ emitters have exhibited a DC current gain of 10 to 1000 for base doping from 1*10/sup 19/ to 8*10/sup 17/ cm/sup 3/, respectively, and Early voltages >or=100 V. The propagation delay of 19-stage ring oscillators was 87 ps/gate. The transistor-fabrication process was designed to be manufacturable, and the planar nature of the transistor surface should permit large-scale integration with good yields.< ></description><subject>Applied sciences</subject><subject>Doping</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Gallium arsenide</subject><subject>Heterojunction bipolar transistors</subject><subject>Large scale integration</subject><subject>Manufacturing processes</subject><subject>MOCVD</subject><subject>Process design</subject><subject>Propagation delay</subject><subject>Ring oscillators</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Transistors</subject><subject>Voltage-controlled oscillators</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1990</creationdate><recordtype>article</recordtype><recordid>eNqN0T1PwzAQBmALgUQpDKxMXkBiSOvzt8dSoEUqKkNhjZzEgaC0ATul6r_HpZVgo8tZJz1-dadD6BxID4CYPsgeEA1KH6AOCKESI7k8RB1CQCeGaXaMTkJ4j63knHbQ6Km2C-vxoB7ZQehvCh7fzHBpM1_ltnUFztb4cTp8ucXNl_Ovvlm1b3hVxWLxplvgzAZ3io5KWwd3tnu76Pn-bjYcJ5Pp6GE4mCQ5Z9Am4DjkHGzBMsWIEBxcaWRRlEwrCgCGxHl1xotSMSaloJTHSYXV1irOqGJddLXN_fDN59KFNp1XIXd13MI1y5BSQ-LasAfUGkAQuQcUQBVl_0OhwSil94MCIMLrLcx9E4J3Zfrhq7n16xRIujlnCjLdnjPay12oDbmtS28XeRV-PxhGuRIkuoutq5xzf_J-Qr4Bj4mh4w</recordid><startdate>19900501</startdate><enddate>19900501</enddate><creator>Plumton, D.L.</creator><creator>Yang, J.-Y.</creator><creator>Morris, F.J.</creator><creator>Lambert, S.A.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope><scope>H8D</scope><scope>7QF</scope><scope>8BQ</scope><scope>JG9</scope></search><sort><creationdate>19900501</creationdate><title>Planar AlGaAs/GaAs HBT fabricated by MOCVD overgrowth with a grown base</title><author>Plumton, D.L. ; Yang, J.-Y. ; Morris, F.J. ; Lambert, S.A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c431t-1e41c41ad3b7305541ef96ddf3872111909648b4df7336652240165a8aa743273</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1990</creationdate><topic>Applied sciences</topic><topic>Doping</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Gallium arsenide</topic><topic>Heterojunction bipolar transistors</topic><topic>Large scale integration</topic><topic>Manufacturing processes</topic><topic>MOCVD</topic><topic>Process design</topic><topic>Propagation delay</topic><topic>Ring oscillators</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Transistors</topic><topic>Voltage-controlled oscillators</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Plumton, D.L.</creatorcontrib><creatorcontrib>Yang, J.-Y.</creatorcontrib><creatorcontrib>Morris, F.J.</creatorcontrib><creatorcontrib>Lambert, S.A.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Aerospace Database</collection><collection>Aluminium Industry Abstracts</collection><collection>METADEX</collection><collection>Materials Research Database</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Plumton, D.L.</au><au>Yang, J.-Y.</au><au>Morris, F.J.</au><au>Lambert, S.A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Planar AlGaAs/GaAs HBT fabricated by MOCVD overgrowth with a grown base</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>1990-05-01</date><risdate>1990</risdate><volume>37</volume><issue>5</issue><spage>1187</spage><epage>1192</epage><pages>1187-1192</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>A planar heterojunction bipolar transistor (HBT) with an AlGaAs emitter layer epitaxially grown onto a selectively defined grown base layer, where the base is grown with the collector as part of the original epi, is discussed. The transistors fabricated with this process exhibit good gain and output characteristics. Transistors with 7*7 mu m/sup 2/ emitters have exhibited a DC current gain of 10 to 1000 for base doping from 1*10/sup 19/ to 8*10/sup 17/ cm/sup 3/, respectively, and Early voltages >or=100 V. The propagation delay of 19-stage ring oscillators was 87 ps/gate. The transistor-fabrication process was designed to be manufacturable, and the planar nature of the transistor surface should permit large-scale integration with good yields.< ></abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/16.108178</doi><tpages>6</tpages></addata></record> |
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| ispartof | IEEE transactions on electron devices, 1990-05, Vol.37 (5), p.1187-1192 |
| issn | 0018-9383 1557-9646 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_25819778 |
| source | IEEE Electronic Library (IEL) |
| subjects | Applied sciences Doping Electronics Exact sciences and technology Gallium arsenide Heterojunction bipolar transistors Large scale integration Manufacturing processes MOCVD Process design Propagation delay Ring oscillators Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors Voltage-controlled oscillators |
| title | Planar AlGaAs/GaAs HBT fabricated by MOCVD overgrowth with a grown base |
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