Preferred crystal orientation of cobalt ferrite thin films induced by ion bombardment during deposition
Thin films of CoxFe3−xO4−y (x=0.8, 1.0, 1.15, 1.25, 1.5, 1.8) were prepared under 100–500 eV Ar+-ion bombardment during film deposition. Strong crystallization enhancement and preferred crystallographic orientation were observed as the effects of ion bombardment. Crystal orientation normal to the su...
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| Veröffentlicht in: | Journal of applied physics 1992-06, Vol.71 (12), p.5926-5929 |
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| container_title | Journal of applied physics |
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| creator | OKUNO, S. N HASHIMOTO, S INOMATA, K |
| description | Thin films of CoxFe3−xO4−y (x=0.8, 1.0, 1.15, 1.25, 1.5, 1.8) were prepared under 100–500 eV Ar+-ion bombardment during film deposition. Strong crystallization enhancement and preferred crystallographic orientation were observed as the effects of ion bombardment. Crystal orientation normal to the substrate depended on the composition x; 〈110〉-axis orientation was obtained for x=0.8 and 1.0 and 〈111〉 orientation for x=1.15, 1.25, 1.5, and 1.8. The orientation was not affected significantly by the incident angle of the ions and did not vary with ion energy in the range 100–500 eV. The mechanism of crystal orientation is thought to have a close relationship with the preferential sputtering of oxygen by Ar+-ion impact. |
| doi_str_mv | 10.1063/1.350442 |
| format | Article |
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N ; HASHIMOTO, S ; INOMATA, K</creator><creatorcontrib>OKUNO, S. N ; HASHIMOTO, S ; INOMATA, K</creatorcontrib><description>Thin films of CoxFe3−xO4−y (x=0.8, 1.0, 1.15, 1.25, 1.5, 1.8) were prepared under 100–500 eV Ar+-ion bombardment during film deposition. Strong crystallization enhancement and preferred crystallographic orientation were observed as the effects of ion bombardment. Crystal orientation normal to the substrate depended on the composition x; 〈110〉-axis orientation was obtained for x=0.8 and 1.0 and 〈111〉 orientation for x=1.15, 1.25, 1.5, and 1.8. The orientation was not affected significantly by the incident angle of the ions and did not vary with ion energy in the range 100–500 eV. 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The mechanism of crystal orientation is thought to have a close relationship with the preferential sputtering of oxygen by Ar+-ion impact.</description><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Exact sciences and technology</subject><subject>Physics</subject><subject>Solid surfaces and solid-solid interfaces</subject><subject>Surface and interface dynamics and vibrations</subject><subject>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><subject>Thin film structure and morphology</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1992</creationdate><recordtype>article</recordtype><recordid>eNo9kLtOwzAYRi0EEuUi8QgeEGJJsR27tkdUcZMqwQBz5Ni_i1ESF9sZ-vYkasX0Lec7w0HohpIlJav6gS5rQThnJ2hBidKVFIKcogUhjFZKS32OLnL-IYRSVesF2n4k8JASOGzTPhfT4ZgCDMWUEAccPbaxNV3BMxQK4PIdBuxD12ccBjfa6dju8cy2sW9Ncv10xm5MYdhiB7uYw2y6QmfedBmuj3uJvp6fPtev1eb95W39uKlsLWipvADRag5AmGS0NtRpLwXnxilmudNce6-Zco6swIJtW6m4kExoxZn2FOpLdHfw7lL8HSGXpg_ZQteZAeKYGyYUlVSSCbw_gDbFnKcIzS6F3qR9Q0kzl2xocyg5obdHp8nWdD6ZwYb8z4t6pbgU9R9LMXPc</recordid><startdate>19920615</startdate><enddate>19920615</enddate><creator>OKUNO, S. 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N ; HASHIMOTO, S ; INOMATA, K</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c351t-f5e5b94ee027213a1d9f7544ad82c4d949ff928dd06ececbb784572598429f1e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1992</creationdate><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Exact sciences and technology</topic><topic>Physics</topic><topic>Solid surfaces and solid-solid interfaces</topic><topic>Surface and interface dynamics and vibrations</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><topic>Thin film structure and morphology</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>OKUNO, S. 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The orientation was not affected significantly by the incident angle of the ions and did not vary with ion energy in the range 100–500 eV. The mechanism of crystal orientation is thought to have a close relationship with the preferential sputtering of oxygen by Ar+-ion impact.</abstract><cop>Woodbury, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.350442</doi><tpages>4</tpages></addata></record> |
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| subjects | Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Physics Solid surfaces and solid-solid interfaces Surface and interface dynamics and vibrations Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology |
| title | Preferred crystal orientation of cobalt ferrite thin films induced by ion bombardment during deposition |
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