Dimensionality-driven metal–insulator transition in spin–orbit-coupled IrO2

A metal–insulator transition is observed in spin–orbit-coupled IrO2 thin films upon reduction of the film thickness. In the epitaxially grown samples, the critical thickness (t ∼ 1.5–2.2 nm) is found to depend on growth orientation (001), (100) or (110). Interestingly from the applied point of view,...

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Veröffentlicht in:	Nanoscale 2021-10, Vol.13 (40), p.17125-17135
Hauptverfasser:	Arias-Egido, E, Laguna-Marco, M A, Piquer, C, Jiménez-Cavero, P, Lucas, I, Morellón, L, Gallego, F, Rivera-Calzada, A, M Cabero-Piris, Santamaria, J, Fabbris, G, Haskel, D, Boada, R, Díaz-Moreno, S
Format:	Artikel
Sprache:	eng
Schlagworte:	Electrical properties Epitaxial growth Film thickness Magnetic measurement Magnetic properties Metal-insulator transition Thin films
Online-Zugang:	Volltext
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