Process study of silicon carbide coatings deposited on steel by plasma-assisted chemical vapor deposition from tetramethylsilane-argon gas system

Silicon carbide coatings were prepared in an RF plasma-assisted chemical vapor deposition (CVD) device from the tetramethylsilane-argon gas system. The present paper is devoted to investigation of the plasma process and determination of the deposition rate with the experimental parameters. By employ...

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Veröffentlicht in:Japanese Journal of Applied Physics 1992-12, Vol.31 (12A), p.4053-4060
Hauptverfasser: WEI ZHANG, LELOGEAIS, M, DUCARROIR, M
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Sprache:eng
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