Interface and bulk trap generation in metal-oxide-semiconductor capacitors

The effects of electron-hole pair recombination near the silicon/silicon dioxide interface of aluminum-gate metal-oxide-semiconductor capacitors have been studied. For the first time, electron-heating-induced trap generation and interface state creation is separated from those defects created throug...

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Veröffentlicht in:	Journal of applied physics 1990-06, Vol.67 (12), p.7439-7452
Hauptverfasser:	BUCHANAN, D. A, DIMARIA, D. J
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Compound structure devices Electronics Exact sciences and technology Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Online-Zugang:	Volltext
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