Pulsed laser deposition of stoichiometric LiNbO sub 3 thin films by using O sub 2 and Ar gas mixtures as ambients

Pulsed laser deposition of stoichiometric LiNbO sub 3 thin films by using O sub 2 and Ar gas mixtures as ambients

Stoichiometric films of LiNbO sub 3 are deposited on (100)Si by laser ablation in a mixture of 400 mtorr Ar and 100 mtorr O sub 2 . Choice of ambient is critical to attainment of stoichiometry.

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Veröffentlicht in:Journal of applied physics 1992-01, Vol.71 (11), p.5718-5720
Hauptverfasser: Ogale, S B, Nawathey-Dikshit, Rashmi, Dikshit, S J
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Sprache:eng
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container_title Journal of applied physics
container_volume 71
creator Ogale, S B
Nawathey-Dikshit, Rashmi
Dikshit, S J
description Stoichiometric films of LiNbO sub 3 are deposited on (100)Si by laser ablation in a mixture of 400 mtorr Ar and 100 mtorr O sub 2 . Choice of ambient is critical to attainment of stoichiometry.
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title Pulsed laser deposition of stoichiometric LiNbO sub 3 thin films by using O sub 2 and Ar gas mixtures as ambients
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