Free-carrier generation dynamics induced by ultrashort intense terahertz pulses in silicon
We report the results of experimental studies and numerical simulation of the dynamics of the electron-hole pairs formation in silicon under the action of a two-period terahertz pulse with a maximum electric field strength of up to 23 MV/cm. It is shown that an inhomogeneous distribution of the char...
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| Veröffentlicht in: | Optics express 2021-08, Vol.29 (16), p.26093-26102 |
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| container_title | Optics express |
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| creator | Ovchinnikov, A. V. Chefonov, O. V. Agranat, M. B. Kudryavtsev, A. V. Mishina, E. D. Yurkevich, A. A. |
| description | We report the results of experimental studies and numerical simulation of the dynamics of the electron-hole pairs formation in silicon under the action of a two-period terahertz pulse with a maximum electric field strength of up to 23 MV/cm. It is shown that an inhomogeneous distribution of the charge carrier concentration over the depth of the silicon sample is formed, which persists for several microseconds. This inhomogeneity is formed due to a sharp increase in the rate of filling the conduction band with free carriers in the subsurface input layer of the silicon wafer, which occurs at a field strength above 15 MV/cm. |
| doi_str_mv | 10.1364/OE.430752 |
| format | Article |
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| title | Free-carrier generation dynamics induced by ultrashort intense terahertz pulses in silicon |
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