Ultra-wideband graphene-based absorber in the terahertz regime based on elliptical slots and a complementary sinusoidal-patterned dielectric layer

A graphene-based absorber is presented based on elliptical slots and a complementary sinusoidal-patterned dielectric layer. The proposed absorber structure includes upper dielectric and metal film layers resulting in a Fabry–Perot cavity. The produced cavity enhances the confinement of electromagnet...

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Veröffentlicht in:Applied optics (2004) 2021-08, Vol.60 (24), p.7297-7303
Hauptverfasser: Zareian-Jahromi, Ehsan, Nourbakhsh, Milad, Basiri, Raheleh, Mashayekhi, Valiollah
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container_issue 24
container_start_page 7297
container_title Applied optics (2004)
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creator Zareian-Jahromi, Ehsan
Nourbakhsh, Milad
Basiri, Raheleh
Mashayekhi, Valiollah
description A graphene-based absorber is presented based on elliptical slots and a complementary sinusoidal-patterned dielectric layer. The proposed absorber structure includes upper dielectric and metal film layers resulting in a Fabry–Perot cavity. The produced cavity enhances the confinement of electromagnetic waves. The presented absorber yields an absolute bandwidth of 4.02 THz (0.51–4.53 THz) considering an 0.88 absorbance level together with normal incidence. The presented structure benefits from an almost insensitive ultra-wideband absorbing performance as θ varies up to 50°and 60° for TE and TM polarizations, respectively. Moreover, the considered symmetry in the design procedure results in an almost insensitive structure with respect to the φ incident angle. Finally, the obtained 160% fractional bandwidth is much greater compared to mentioned previous works in literature.
doi_str_mv 10.1364/AO.431075
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2155-3165
1539-4522
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source Alma/SFX Local Collection; Optica Publishing Group Journals
subjects Absorbers
Bandwidths
Dielectrics
Electromagnetic radiation
Fabry-Perot interferometers
Graphene
Sine waves
Ultrawideband
title Ultra-wideband graphene-based absorber in the terahertz regime based on elliptical slots and a complementary sinusoidal-patterned dielectric layer
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