Picosecond carrier dynamics in highly excited InGaAs/InP/InGaAsP/InP structures

The carrier dynamics in highly excited In sub(1-x)Ga sub(x)As/InP/In sub(1-x) Ga sub(x)As sub(y)P sub(1-y)/InP structures, with x = 0.47 and y = 0.9, have been investigated by the picosecond dynamic grating technique. The carrier recombination time tau sub(R) and the ambipolar diffusion coefficient...

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Veröffentlicht in:	Semiconductor science and technology 1992-11, Vol.7 (11), p.1355-1358
Hauptverfasser:	Petrauskas, M, Juodkazis, S, Netikis, V, Willander, M, Ouacha, A, Hammarlund, B
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport in interface structures Exact sciences and technology Physics
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Zusammenfassung:	The carrier dynamics in highly excited In sub(1-x)Ga sub(x)As/InP/In sub(1-x) Ga sub(x)As sub(y)P sub(1-y)/InP structures, with x = 0.47 and y = 0.9, have been investigated by the picosecond dynamic grating technique. The carrier recombination time tau sub(R) and the ambipolar diffusion coefficient D sub(a) at a non-equilibrium carrier density of about 10 super(19) cm super(-3) have been determined for layers of InGaAs, InP and InGaAsP on InP substrates. The influence of many-body effects and reabsorption of emitted photons on the carrier diffusion at high excitation levels are discussed.
ISSN:	0268-1242 1361-6641
DOI:	10.1088/0268-1242/7/11/012