Cd1−xMgxS CQD thin films for high performance and highly selective NIR photodetection

Development of high-performance and highly selective NIR photodetectors (PDs) using wide band gap semiconductors is a significant field of research in the present scenario. Herein, cost effective and easy fabrication of NIR PDs is demonstrated by employing the thin films of Cd1−xMgxS (x = 0, 0.01, 0...

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Veröffentlicht in:	Dalton transactions : an international journal of inorganic chemistry 2021-09, Vol.50 (36), p.12708-12715
Hauptverfasser:	Kalsi, Tania, Kumar, Pragati
Format:	Artikel
Sprache:	eng
Schlagworte:	Doping Photosensitivity Quantum dots Quantum efficiency Response time Selectivity Thin films
Online-Zugang:	Volltext
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