IMRE, BIM and SUPER using patternwise esterification
Patternwise esterification of diazonaphthoquinone - novolak based photoresists was used for three advanced photolithographic procedures namely ImRe (Image Reversal), BIM (Built In Mask) and SUPER (SUbmicron Positively dry Etch Resist). With all three techniques 0.6 μm patterns with vertical side wal...
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| Veröffentlicht in: | Microelectronic engineering 1990, Vol.11 (1), p.497-502 |
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| container_title | Microelectronic engineering |
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| creator | Mutsaers, C.M.J. Vollenbroek, F.A. Nijssen, W.P.M. Visser, R.J. |
| description | Patternwise esterification of diazonaphthoquinone - novolak based photoresists was used for three advanced photolithographic procedures namely ImRe (Image Reversal), BIM (Built In Mask) and SUPER (SUbmicron Positively dry Etch Resist). With all three techniques 0.6 μm patterns with vertical side walls could be obtained using 405 nm UV light and a 0.30 NA lens. This corresponds with a k-factor of 0.44, which is well beyond the Rayleigh limit (k = 0.61). |
| doi_str_mv | 10.1016/0167-9317(90)90158-P |
| format | Article |
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With all three techniques 0.6 μm patterns with vertical side walls could be obtained using 405 nm UV light and a 0.30 NA lens. This corresponds with a k-factor of 0.44, which is well beyond the Rayleigh limit (k = 0.61).</description><subject>Applied sciences</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. 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| source | Elsevier ScienceDirect Journals |
| subjects | Applied sciences Electronics Exact sciences and technology Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices |
| title | IMRE, BIM and SUPER using patternwise esterification |
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