IMRE, BIM and SUPER using patternwise esterification

IMRE, BIM and SUPER using patternwise esterification

Patternwise esterification of diazonaphthoquinone - novolak based photoresists was used for three advanced photolithographic procedures namely ImRe (Image Reversal), BIM (Built In Mask) and SUPER (SUbmicron Positively dry Etch Resist). With all three techniques 0.6 μm patterns with vertical side wal...

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Veröffentlicht in:Microelectronic engineering 1990, Vol.11 (1), p.497-502
Hauptverfasser: Mutsaers, C.M.J., Vollenbroek, F.A., Nijssen, W.P.M., Visser, R.J.
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Zusammenfassung:Patternwise esterification of diazonaphthoquinone - novolak based photoresists was used for three advanced photolithographic procedures namely ImRe (Image Reversal), BIM (Built In Mask) and SUPER (SUbmicron Positively dry Etch Resist). With all three techniques 0.6 μm patterns with vertical side walls could be obtained using 405 nm UV light and a 0.30 NA lens. This corresponds with a k-factor of 0.44, which is well beyond the Rayleigh limit (k = 0.61).
ISSN:0167-9317
1873-5568
DOI:10.1016/0167-9317(90)90158-P